Er3+ 掺杂对Bi3Ti1.5W0.5O9-Bi4Ti3O12 共生无铅压电陶瓷性能的影响

doi:10.11901/1005.3093.2021.302

材料研究学报

2022, Vol. 36

Issue (10): 760-768 DOI: 10.11901/1005.3093.2021.302

研究论文

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Er³⁺ 掺杂对Bi₃Ti_1.5W_0.5O₉-Bi₄Ti₃O₁₂ 共生无铅压电陶瓷性能的影响

曾仁芬, 江向平(

), 陈超, 黄枭坤, 聂鑫, 叶芬

景德镇陶瓷大学材料科学与工程学院江西省先进陶瓷材料重点实验室景德镇 333403

Effects of Er³⁺-doping on Performance of Bi₃Ti_1.5W_0.5O₉-Bi₄Ti₃O₁₂ Intergrowth Lead-free Piezoceramics

ZENG Renfen, JIANG Xiangping(

), CHEN Chao, HUANG Xiaokun, NIE Xin, YE Fen

Jiangxi Key Laboratory of Advanced Ceramic Materials, School of Material Science and Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, China

引用本文:

曾仁芬, 江向平, 陈超, 黄枭坤, 聂鑫, 叶芬. Er³⁺ 掺杂对Bi₃Ti_1.5W_0.5O₉-Bi₄Ti₃O₁₂ 共生无铅压电陶瓷性能的影响[J]. 材料研究学报, 2022, 36(10): 760-768.
Renfen ZENG, Xiangping JIANG, Chao CHEN, Xiaokun HUANG, Xin NIE, Fen YE. Effects of Er³⁺-doping on Performance of Bi₃Ti_1.5W_0.5O₉-Bi₄Ti₃O₁₂ Intergrowth Lead-free Piezoceramics[J]. Chinese Journal of Materials Research, 2022, 36(10): 760-768.

全文: PDF(4082 KB) HTML

摘要:

用传统固相法制备了Bi_7-_x Er _x Ti_4.5W_0.5O₂₁(BTW-BIT-xEr³⁺,x=0.05、0.10、0.15、0.25、0.35)共生铋层结构无铅压电陶瓷,用BTW-BIT-xEr³⁺的XRD和SEM表征其相结构和形貌,研究了Er³⁺掺杂对其上转换发光性能和电学性能的影响。结果表明：在这种陶瓷中生成了铋层状结构的单一晶相。在980 nm光波激发下所有组分的上转换荧光谱中都能清晰地观察到两个绿光和一个红光发射峰,峰的中心分别位于532 nm、548 nm和660 nm处。改变掺杂Er³⁺离子浓度可调节其强度比。根据BTW-BIT-0.15Er³⁺样品在532 nm和548 nm绿光的光强比拟合了290~440 K的温度灵敏度,结果表明440 K处的灵敏度最大为0.0023 K^-1。Er³⁺离子替代BTW-BIT-xEr³⁺伪钙钛矿层的Bi³⁺使氧空位浓度的降低,降低了高温介电损耗,提高了激活能和压电常数。BTW-BIT-0.15Er³⁺陶瓷的综合电学性能最优,分别为d₃₃=14 pC/N、T_c=697℃,tanδ=0.53%、Q_m=2055。这种陶瓷材料具有最优的发光性能和良好的热稳定性。

关键词 ：无机非金属材料, 共生陶瓷, 铋层结构, 上转换发光, 电学性能

Abstract：

Bi_7-_x Er _x Ti_4.5W_0.5O₂₁(BTW-BIT-xEr³⁺, x=0.05, 0.10, 0.15, 0.25, 0.35) lead-free piezoelectric ceramics with intergrowth bismuth-layered structure was fabricated via solid phase synthesizing method. While the effect of Er³⁺-doping on their up conversion fluorescence and electrical properties was systemically investigated. The results of XRD and SEM reveal the formation of a single phase with bismuth-layered structure of Bi_7-_x Er _x Ti_4.5W_0.5O₂₁(BTW-BIT-xEr³⁺(x=0.05, 0.10, 0.15, 0.25, 0.35)). Three emissions of two green and one red were observed for all the BTW-BIT-xEr³⁺ products with chemical compositions within the desired range under 980nm light excitation. The three emissions centered at 532 nm, 548 nm and 660 nm, and the intensity ratio of red to green emissions could be adjusted by changing the doping amount of Er³⁺ ions. According to the intensity ratio of 532 nm to 548 nm for BTW-BIT-0.15Er³⁺ in the range of 290~440 K, the temperature sensitivity was fitted and showed the maximum temperature sensitivity of 0.0023 K^-1 at 440 K. The dielectric and impedance of BTW-BIT-xEr³⁺ ceramics were analyzed. The results show that Er³⁺ ions replaced Bi³⁺ions in the pseudo-perovskite layer, therewith the oxygen vacancy concentration decreases, which may be accounted for the decrease of high-temperature dielectric loss, the raising of activation energy and the enhancement of piezoelectric constant. The BTW-BIT-0.15Er³⁺ ceramic possesses the comprehensive properties: d₃₃=14pC/N, T_c=697℃ and tanδ=0.53%, as well as the optimal photoluminescence and good thermal stability.

Key words： inorganic nonmetallic materials intergrowth ceramics bismuth-layered structure up-conversion luminescence electrical properties

收稿日期: 2021-05-12

ZTFLH:

TQ174

基金资助:国家自然科学基金(51862016);国家自然科学基金(52062018);国家自然科学基金(51762024);江西省自然科学基金(20192BAB206008);江西省自然科学基金(20192BAB212002);江西省教育厅科技项目(GJJ190712);江西省教育厅科技项目(GJJ201331)

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	曾仁芬
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https://www.cjmr.org/CN/10.11901/1005.3093.2021.302 或 https://www.cjmr.org/CN/Y2022/V36/I10/760

图1 BTW-BIT-xEr3+陶瓷在室温下的XRD图谱和BTW-BIT-xEr3+陶瓷在衍射角2θ在29°~30.5°范围的放大图

图2 BTW-BIT样品的XRD的精修图和BTW-BIT-xEr3+样品精修后的晶格参数(a、b、c、V)及晶胞体积

图3 BTW-BIT-xEr3+样品热腐蚀表面的SEM照片

图4 BTW-BIT-xEr3+(x=0.05、0.10、0.15、0.25、0.35)样品在常温下上转换荧光发光谱

图5 Er3+离子光致发光机理能级图

图6 BTW-BIT-xEr3+(x=0.05、0.10、0.15、0.25、0.35)样品的绿光548 nm和红光660 nm的强度比值,插图显示BTW-BIT-xEr3+陶瓷的CIE色度坐标

图7 BTW-BIT-xEr3+(x=0.05、0.10、0.15、0.25、0.35)样品在温度为290~440 K范围内上转换发光谱和FIR随温度的变化,其插图为灵敏度与温度的关系

图8 BTW-BIT-xEr3+样品的介电温谱、介电常数的放大图和介电损耗的放大图

表1 BTW-BIT-xEr3+样品在常温下测量的电学性能

图9 BTW-BIT-xEr3+样品电阻抗与频率的关系

图10 BTW-BIT-xEr3+陶瓷样品阻抗的Cole-Cole图

图11 BTW-BIT-xEr3+ 样品的退极化曲线

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