<strong>Cu</strong>掺杂非晶碳薄膜的电学性能及其载流子输运行为

doi:10.11901/1005.3093.2022.667

材料研究学报

2023, Vol. 37

Issue (10): 747-758 DOI: 10.11901/1005.3093.2022.667

研究论文

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Cu掺杂非晶碳薄膜的电学性能及其载流子输运行为

闫春良¹^,², 郭鹏², 周靖远², 汪爱英²^,³(

)

^1.上海大学材料科学与工程学院上海 200444
^2.中国科学院宁波材料技术与工程研究所中国科学院海洋新材料与应用技术重点实验室浙江省海洋材料与防护技术重点实验室宁波 315201
^3.中国科学院大学材料与光电研究中心北京 100049

Electrical Properties and Carrier Transport Behavior of Cu Doped Amorphous Carbon Films

YAN Chunliang¹^,², GUO Peng², ZHOU Jingyuan², WANG Aiying²^,³(

)

^1.School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
^2.Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
^3.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

引用本文:

闫春良, 郭鹏, 周靖远, 汪爱英. Cu掺杂非晶碳薄膜的电学性能及其载流子输运行为[J]. 材料研究学报, 2023, 37(10): 747-758.
Chunliang YAN, Peng GUO, Jingyuan ZHOU, Aiying WANG. Electrical Properties and Carrier Transport Behavior of Cu Doped Amorphous Carbon Films[J]. Chinese Journal of Materials Research, 2023, 37(10): 747-758.

全文: PDF(12136 KB) HTML

摘要:

以Cu-C拼接靶为靶材，用高功率脉冲磁控溅射制备出4种Cu含量(原子分数)低于10%的Cu掺杂非晶碳(a-C: Cu)薄膜，研究了Cu含量对a-C:Cu薄膜组分结构、电学性能以及载流子输运行为的影响。结果表明：随着非晶碳中Cu含量的提高，a-C:Cu薄膜中sp²-C的含量提高、团簇尺寸增大、薄膜电阻率、透过率和光学带隙均减小，费米能级向价带偏移。Cu含量为2.77%和3.88%的样品在150~250 K的载流子输运机制为Mott型三维变程跳跃传导，在250~350 K则为热激活传导；而Cu含量(原子分数)为5.4%和7.28%的样品在150~350 K均为Mott型三维变程跳跃传导。掺入Cu，可控制非晶碳薄膜的光学和电学性能。

关键词 ：材料表面与界面, 电学性能, 高功率脉冲磁控溅射, Cu掺杂非晶碳, 能带结构

Abstract：

The work aims to study the effect of doped Cu content on the structure, electrical properties and carrier transport behavior of amorphous carbon (a-C) films. The Cu doped a-C (a-C:Cu) films were deposited by a homemade High Power Impulse Magnetron Sputtering set with the Cu-C composite target as sputtering source. A series of a-C: Cu films with Cu content less than 10% (atomic fraction) were deposited by adjusting the position of substrates. The results demonstrated that increasing the doped Cu content led to the enhancement of the content and cluster size of sp²-C in films. Particularly, as the Cu content increased from 2.77% to 7.28%, the sp²-C content increased from 48% to 54%. Accordingly, this decreased the bandgap width from 3.87 eV to 2.93 eV, which corresponds to the reduction of electrical resistivity and transmittance in a-C: Cu films. For a-C: Cu films with Cu content in the range of 2.77%~7.28%, the voltage was positively linear correlated with the excitation in the I-V test, suggesting the dominated ohmic behavior. The resistance of all the a-C:Cu films decreased monotonically with the increase of temperature, demonstrating the typical semiconductor behavior. Specifically, when the Cu content varied in the range of 2.77%~3.88%, the electrical transport of a-C: Cu films was ascribed to the three-dimensional Mott-type variable range hopping conduction in lower temperature from 150 K to 250 K and the thermal activation transport within higher temperature range of 250~350 K, respectively. However, for a-C: Cu films with Cu content of 5.4%~7.28%, only Mott-type variable range hopping conduction played the key role for the carrier transport in temperature of 150~350 K. The results showed that the optical and electrical properties of amorphous carbon films could be significantly controlled by doping Cu, which brought forward the promising potential to develop the carbon-based photoelectric devices with high-performance.

Key words： foundational discipline in materials science electrical properties high power impulse magnetron sputtering Cu doped amorphous carbon band structure

收稿日期: 2022-12-16

ZTFLH:

O484

基金资助:国家自然科学基金(U20A20296);宁波市科技创新2025重大专项(2020Z023);王宽诚率先人才计划卢嘉锡国际团队(GJTD-2019-13);浙江省自然科学基金(LQ20E020004)

通讯作者: 汪爱英，研究员，aywang@nimte.ac.cn，研究方向为表面强化涂层材料与功能改性

Corresponding author: WANG Aiying, Tel: (0574)86685170, E-mail: aywang@nimte.ac.cn

作者简介: 闫春良，男，1997年生，硕士

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https://www.cjmr.org/CN/10.11901/1005.3093.2022.667 或 https://www.cjmr.org/CN/Y2023/V37/I10/747

图1 高功率脉冲磁控溅射设备的示意图

图2 Cu掺杂非晶碳薄膜截面的SEM形貌

图3 Cu掺杂非晶碳薄膜的三维AFM表面形貌

图4 Cu掺杂量不同的a-C: Cu薄膜的XPS全谱、各元素的含量、C 1s精细谱及各杂化碳含量、Cu 2p的精细谱以及Cu的俄歇谱

图5 Cu掺杂量不同的a-C: Cu薄膜的拉曼光谱及其拟合结果

图6 Cu掺杂量不同的a-C:Cu薄膜的XRD谱

图7 Cu含量为2.77%和7.28%样品的高分辨电子图像和选区电子衍射图

图8 Cu掺杂量为2.77%和7.28%样品的电子能量损失谱

图9 Cu掺杂量不同的a-C: Cu薄膜300 K时的 I-V特性曲线和电阻率的变化

图10 Cu掺杂量不同的a-C: Cu薄膜在150~350 K的I-V曲线

图11 Cu掺杂量不同的a-C: Cu薄膜在150~350 K的R-T曲线

图12 Cu掺杂量不同的a-C: Cu薄膜在不同温度范围的ln(R)与T-1/4和T-1的关系曲线

图13 Cu掺杂量不同的a-C: Cu薄膜的透过率曲线、(αhν)2-hν曲线以及光学带隙

图14 不同Cu掺杂量a-C: Cu薄膜的二次电子截至边、价带相对费米能级的位置以及 (c) 能带结构

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