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| GaN薄膜大型V形表面坑的形成和光学性质 |
| 高志远†;段焕淘;郝跃;李培咸;张金凤 |
| 西安电子科技大学微电子学院 教育部宽禁带半导体材料与器件重点实验室 西安 710071 |
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| Formation and optical properties of the large V-shaped surface pits in GaN thin film |
| GAO Zhiyuan†; DUAN Huantao; HAO Yue; LI Peixian; ZHANG Jinfeng |
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;
School of Microelectronics; Xidian University; Xi'an 710071 |
引用本文:
高志远 段焕淘 郝跃 李培咸 张金凤. GaN薄膜大型V形表面坑的形成和光学性质[J]. 材料研究学报, 2008, 22(6): 657-663.
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Formation and optical properties of the large V-shaped surface pits in GaN thin film[J]. Chin J Mater Res, 2008, 22(6): 657-663.
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