溅射沉积富镁Mg3Bi2薄膜的热电性能

doi:10.11901/1005.3093.2021.009

材料研究学报

2021, Vol. 35

Issue (11): 835-842 DOI: 10.11901/1005.3093.2021.009

研究论文

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溅射沉积富镁Mg₃Bi₂薄膜的热电性能

宋贵宏¹(

), 李秀宇¹, 李贵鹏¹, 杜昊², 胡方¹

^1.沈阳工业大学材料科学与工程学院沈阳 110870
^2.广东腐蚀科学与技术创新研究院广州 510530

Thermoelectric Properties of Mg-rich Mg₃Bi₂ Films Prepared by Magnetron Sputtering

SONG Guihong¹(

), LI Xiuyu¹, LI Guipeng¹, DU Hao², HU Fang¹

^1.School of Materials Science and Technology, Shenyang University of Technology, Shenyang 110870, China
^2.Institute of Corrosion Science and Technology of Guangzhou, Guangzhou 510530, China

引用本文:

宋贵宏, 李秀宇, 李贵鹏, 杜昊, 胡方. 溅射沉积富镁Mg₃Bi₂薄膜的热电性能[J]. 材料研究学报, 2021, 35(11): 835-842.
Guihong SONG, Xiuyu LI, Guipeng LI, Hao DU, Fang HU. Thermoelectric Properties of Mg-rich Mg₃Bi₂ Films Prepared by Magnetron Sputtering[J]. Chinese Journal of Materials Research, 2021, 35(11): 835-842.

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摘要:

采用Mg-Bi化合物靶和金属Mg靶用磁控溅射技术制备富Mg的Mg₃Bi₂薄膜并表征其相组成、表面和截面形貌，研究了薄膜的热电性能。结果表明，这种富Mg薄膜由Mg₃Bi₂相和金属Mg相组成且Mg₃Bi₂结构中有Mg空位，具有p型导电特征,Seebeck系数为正值。随着温度的提高，富Mg薄膜的电阻率先略微提高而后显著降低；随着Mg含量的提高富Mg薄膜的电阻率逐渐提高，但是Mg含量达到一定数值后电阻率又急剧下降。Mg含量较低时Seebeck系数随着温度的提高开始时略下降随后很快增大，达到最大值后又很快降低；Mg含量较高时随着温度的提高Seebeck系数开始时略增大，随后缓慢下降。除了Mg含量较低的样品，在温度相同的条件下随着Mg含量的提高薄膜的Seebeck系数值增大，但是Mg含量过高时Seebeck系数值迅速降低，达到普通金属材料Seebeck系数的数量级。这种富Mg薄膜的功率因子，受Seebeck系数和电阻率制约。

关键词 ：无机非金属材料, 热电材料, Mg₃Bi₂薄膜, Seebeck系数, 电阻率, 磁控溅射

Abstract：

Mg-rich Mg₃Bi₂ thin films were prepared by magnetron sputtering with dual targets of Mg-Bi intermetallic compound and metal Mg. The phase composition, surface and cross-sectional morphology as well as thermoelectric properties of the thin films were characterized. The results show that the Mg-rich thin film is composed of phases Mg₃Bi₂ phase and Mg. There exists Mg vacancies within the phase Mg₃Bi₂, therefore, which presents characteristics of p-type conductivity with a positive Seebeck coefficient. With the increase of temperature, the resistance of Mg-rich Mg₃Bi₂films increases slightly at first and then decreases significantly. With the increase of Mg content, the resistivity of Mg-rich Mg₃Bi₂ films gradually increases, but when the Mg content reaches a certain value, the resistivity drops sharply. When the Mg content was low, the Seebeck coefficient first decreased slightly and then increased rapidly with the increase of temperature, and then decreased rapidly after reaching the maximum value. When the Mg content was high, the Seebeck coefficient increased slightly at first and then decreased slowly with the increase of temperature. Except for the samples with low Mg content, the Seebeck coefficient of the films increases with the increase of Mg content at the same temperature, but the Seebeck coefficient decreases rapidly when the Mg content is too high, reaching more or less a level of the same order of magnitude of the Seebeck coefficient of common metal materials. Nevertheless, the power factor of this Mg-rich Mg₃Bi₂film is controlled by the Seebeck coefficient and the resistivity.

Key words： inorganic nonmetallic materials thermoelectric materials Mg₃Bi₂ films Seebeck coefficient Resistivity magnetron sputtering

收稿日期: 2021-01-18

ZTFLH:

O614.22

基金资助:国家自然科学基金项目(51772193)

作者简介: 宋贵宏，男，1965年生，博士

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https://www.cjmr.org/CN/10.11901/1005.3093.2021.009 或 https://www.cjmr.org/CN/Y2021/V35/I11/835

图1 富镁薄膜的XRD谱

图2 Mg-Bi的二元相图

表1 沉积薄膜的化学成分

图3 富镁薄膜表面的形貌。

图4 不同沉积时间富镁薄膜的横截面形貌

图5 富镁薄膜的表面形貌和元素面扫描

图6 富镁薄膜的电阻率与温度关系以及电导率与温度倒数的关系

图7 富镁薄膜的Seebeck系数与温度的关系

图8 富镁薄膜的功率因子与温度的关系

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