CeO2掺杂对SrNa0.5Bi4.5Ti5O18高温无铅压电陶瓷性能的影响

doi:10.11901/1005.3093.2014.460

材料研究学报

2015, Vol. 29

Issue (3): 201-206 DOI: 10.11901/1005.3093.2014.460

本期目录 | 过刊浏览

CeO₂掺杂对SrNa_0.5Bi_4.5Ti₅O₁₈高温无铅压电陶瓷性能的影响

姬万滨,初瑞清(

),徐志军,郝继功,程仁飞

聊城大学材料科学与工程学院聊城 252059

Effect of CeO₂-doping on Properties of SrNa_0.5Bi_4.5Ti₅O₁₈-based High Temperature Lead-free Piezoelectric Ceramics

Wanbin JI,Ruiqing CHU(

),Zhijun XU,Jigong HAO,Renfei CHENG

College of Materials Science and Engineering, Liaocheng University, Liaocheng 252059

引用本文:

姬万滨,初瑞清,徐志军,郝继功,程仁飞. CeO₂掺杂对SrNa_0.5Bi_4.5Ti₅O₁₈高温无铅压电陶瓷性能的影响[J]. 材料研究学报, 2015, 29(3): 201-206.
Wanbin JI, Ruiqing CHU, Zhijun XU, Jigong HAO, Renfei CHENG. Effect of CeO₂-doping on Properties of SrNa_0.5Bi_4.5Ti₅O₁₈-based High Temperature Lead-free Piezoelectric Ceramics[J]. Chinese Journal of Materials Research, 2015, 29(3): 201-206.

全文: PDF(1530 KB) HTML

摘要:

用固相合成法制备SrNa_0.5Bi_4.5Ti₅O₁₈ + x%(质量分数) CeO₂ (SNBTC_x) 铋层状无铅压电陶瓷, 研究了CeO₂掺杂对SNBTC_x 陶瓷微观结构和电性能的影响。结果表明, CeO₂掺杂并未改变SNBTC_x陶瓷的晶体结构, 所有样品均为单一的铋层状结构陶瓷; CeO₂掺杂没有使SNBTC_x陶瓷居里温度发生明显变化, 居里温度均高于560℃; 随着CeO₂掺杂量的增加SNBTC_x陶瓷材料的介电常数减小, 但是其介电损耗先增大后减小。当CeO₂掺杂量为0.3%(质量分数)时SNBTC_0.03陶瓷具有最优电性能: T_c = 567℃, d₃₃=29 pC/N, tanδ=0.015, 且在500℃退极化处理后, 其d₃₃仍保持在22 pC/N以上, 说明SNBTC_0.03陶瓷可在高温下应用。

关键词 ：无机非金属材料, 高温压电陶瓷, 铋层状, 压电性能, 温度稳定性

Abstract：

The lead-free bismuth layer-structured piezoelectric ceramics of SrNa_0.5Bi_4.5Ti₅O₁₈ + x wt.% CeO₂(SNBTC_x) were prepared by solid state reaction and the effect of CeO₂ on the microstructure and electrical properties of the ceramics have been investigated. The result shows that the CeO₂ doping did not alter the crystallographic structure of the ceramics. There were not obvious changes in Curie temperature of the ceramics with the doping of CeO₂, and all the prepared SNBTC_x had high Curie points (T_c≥560^oC). With the increase of CeO₂ contents, the dielectric constant decreased gradually, while the dielectric loss increased firstly and then decreased. Among others, the ceramics SNBTC_x with x=0.3 exhibited the best properties: T_c=567^oC, d₃₃=29 pC/N and tanδ=0.015, besides of which the d₃₃valuewas still over 22 pC/N after annealing at 500^oC, indicating that the ceramic could be used at high temperature.

Key words： inorganic nonmetallic materials high temperature piezoelectric ceramic bismuth layer-structured piezoelectric properties temperature stability

收稿日期: 2014-08-26

基金资助:* 国家自然科学基金51372110、51402144和51302124, 国家高技术研究发展计划2013AA030801, 山东省自然科学基金ZR2012EMM004, 广东省科技计划2013B091000001和山东省自主创新及成果转化专项2014CGZH0904资助。

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https://www.cjmr.org/CN/10.11901/1005.3093.2014.460 或 https://www.cjmr.org/CN/Y2015/V29/I3/201

图1 SNBTCx陶瓷样品的XRD图谱

图2 SNBTCx陶瓷的晶胞参数及晶胞体积与x的关系

图3 在1140℃保温2 h后SNBTCx陶瓷样品的表面微观形貌

图4 SNBTCx陶瓷样品100 kHz的介电常数和介电损耗与温度的关系

图5 SNBTCx陶瓷的居里温度与x的关系

图6 SNBTCx陶瓷的室温d33及随退火温度的变化

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