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材料研究学报  2008, Vol. 22 Issue (3): 297-302    
  论文 本期目录 | 过刊浏览 |
Fe/Si薄膜中硅化物的形成和氧化
张晋敏; 谢泉;梁艳;曾武贤
贵州大学电子科学与信息技术学院;贵州大学新型光电子材料与应用技术研究所
ZHANG Jin-min
贵州大学电子科学与信息技术学院;贵州大学新型光电子材料与应用技术研究所
引用本文:

张晋敏; 谢泉; 梁艳; 曾武贤 . Fe/Si薄膜中硅化物的形成和氧化[J]. 材料研究学报, 2008, 22(3): 297-302.
, , , . [J]. Chin J Mater Res, 2008, 22(3): 297-302.

全文: PDF(1135 KB)  
摘要: 用磁控溅射方法制备Fe/Si薄膜, 采用卢瑟福背散射(RBS)技术研究了退火过程中的相变过程和氧化. 结果表明:未退火的Fe/Si薄膜界面清晰, 873 K退火后, 界面附近Fe、Si原子开始相互扩散,973 K退火后富金属相Fe1+xSi形成, 而1073 K退火后形成中间相FeSi,当温度增加至1273 K后所有硅化物完全转变为富硅相FeSi$_{2}$, 即随退火温度的升高,Fe、Si原子间扩散增强, 从而形成不同化学计量比的Fe--Si化合物,且薄膜中易迁移原子种类由Fe变为Si. 同时, 质子束RBS和XRD测量结果显示,在未退火及低温退火的样品中, 薄膜有氧化现象, 随退火温度增加,由于高温下金属氧化物被还原并逐渐挥发, 样品中氧的含量逐渐减少最后完全消失.
关键词 无机非金属材料半导体材料原子扩散    
Key words
收稿日期: 2007-05-10     
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