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材料研究学报  2003, Vol. 17 Issue (4): 433-438    
  论文 本期目录 | 过刊浏览 |
CNx薄膜的制备和光电性能
张加涛;曹传宝;朱鹤孙
北京理工大学材料科学研究中心
引用本文:

张加涛; 曹传宝; 朱鹤孙 . CNx薄膜的制备和光电性能[J]. 材料研究学报, 2003, 17(4): 433-438.

全文: PDF(743 KB)  
摘要: 以单晶硅片(100)和镀Pt硅片为衬底,用电化学沉积方法在阴极制备出CNx薄膜(x接近于1),薄膜的表面平滑、颗粒均匀。热处理后得到了β-C3N4和α-C3N4多晶结构薄膜。热处理温度的提高使薄膜中的C≡N键逐渐减少而消失,氮元素的流失使薄膜中非晶碳的成分增多,但是薄膜中碳氮逐渐以sp3C-N为主。薄膜的能带在1.1~1.8 eV之间,氮含量对能带大小影响较大。热处理使薄膜的电阻率(高于108?.cm)变化不大。氮含量影响PL谱中3.0和3.5eV处发射峰的峰强,不影响峰位。薄膜的能带为1.1~1.8 eV。
关键词 无机非金属材料CNx薄膜电化学沉积光电性    
Key words
收稿日期: 1900-01-01     
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