氧控In2O3薄膜的光电性能

doi:10.11901/1005.3093.2020.250

材料研究学报

2021, Vol. 35

Issue (5): 394-400 DOI: 10.11901/1005.3093.2020.250

研究论文

本期目录 | 过刊浏览

氧控In₂O₃薄膜的光电性能

孙茂林¹, 宫震¹, 王施文², 尹航¹, 李瑞武¹, 张政¹, 李雨彤¹, 吴法宇¹(

)

^1.辽宁科技大学材料与冶金学院鞍山 114051
^2.鞍钢股份质检计量中心鞍山 114000

Optical and Electrical Properties of Oxygen-controlled In₂O₃ Film

SUN Maolin¹, GONG Zhen¹, WANG Shiwen², YIN Hang¹, LI Ruiwu¹, ZHANG Zheng¹, LI Yutong¹, WU Fayu¹(

)

^1.School of Materials and Metallurgy, Liaoning University of Science and Technology, Anshan 114051, China
^2.Quality Inspection and Measurement Center of Anshan Iron & Steel Co. Ltd. , Anshan 114000, China

引用本文:

孙茂林, 宫震, 王施文, 尹航, 李瑞武, 张政, 李雨彤, 吴法宇. 氧控In₂O₃薄膜的光电性能[J]. 材料研究学报, 2021, 35(5): 394-400.
Maolin SUN, Zhen GONG, Shiwen WANG, Hang YIN, Ruiwu LI, Zheng ZHANG, Yutong LI, Fayu WU. Optical and Electrical Properties of Oxygen-controlled In₂O₃ Film[J]. Chinese Journal of Materials Research, 2021, 35(5): 394-400.

全文: PDF(5771 KB) HTML

摘要:

对比在控氧条件下制备态和退火态In₂O₃薄膜的微观结构和光电性能，分析两种状态中不同的氧作用机制。两种控氧行为都能够有效提高In₂O₃薄膜的晶格有序度和降低氧空位浓度，使其载流子浓度下降、迁移率提高和光学带隙变窄；等离子体制备过程中氧以高活性非平衡方式注入晶格，而退火时氧以低活性平衡态扩散的方式进入晶格；不同的氧作用机制使得退火态薄膜比制备态薄膜具有更少的结构缺陷、更高的氧空位浓度和更佳的透光导电性。

关键词 ：无机非金属材料, In₂O₃薄膜, 控氧溅射, 控氧退火

Abstract：

The difference of oxygen acting mechanisms between the as-deposited and as-annealed In₂O₃ films under the oxygen-controlled conditions was investigated by the microstructure as well as optical and electrical properties. Both kinds of oxygen-controlled behaviors could effectively improve lattice order and reduce oxygen vacancies in In₂O₃ films, which narrowed optical band gap, decreased carrier concentration and increased mobility. Oxygen with a high activity was injected into films in a non-equilibrium manner during plasma-deposited process, and oxygen with a low activity by the equilibrium way accessed in films during annealing process. As a result, under different oxygen acting mechanism, the as-annealed In₂O₃ film had less structural defects and more oxygen vacancies than that of the as-deposited film by plasma sputtering, and in turn, had better light-transmittance and electrical conductance. Finally, oxygen-controlled behavior in indium oxide film underlies optical and electrical characteristics.

Key words： inorganic non-metallic materials In₂O₃ film oxygen-controlled sputtering oxygen-controlled annealing

收稿日期: 2020-06-23

ZTFLH:

O484.5

基金资助:国家自然科学基金(51502126);辽宁省自然科学基金(20180550802)

作者简介: 孙茂林，男，1996年生，硕士生

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https://www.cjmr.org/CN/10.11901/1005.3093.2020.250 或 https://www.cjmr.org/CN/Y2021/V35/I5/394

表1 In2O3薄膜的溅射工艺参数

图1 In2O3薄膜的退火处理曲线(a)和SEM照片：制备于纯Ar气氛(b)；制备于氧分压为1.0×10-2 Pa的气氛(c)；退火于氧分压为1.0×10-2 Pa的气氛(d)

图2 制备工艺不同的In2O3薄膜的XRD谱

图3 In2O3薄膜的透光光谱和光学带隙

图4 制备工艺不同的In2O3薄膜的电阻率、方块电阻、载流子浓度以及迁移率

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