退火氧分压对AZO薄膜的透光和导电性能的影响

doi:10.11901/1005.3093.2018.265

材料研究学报

2018, Vol. 32

Issue (11): 861-866 DOI: 10.11901/1005.3093.2018.265

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退火氧分压对AZO薄膜的透光和导电性能的影响

王艳雪¹, 李瑞武¹, 范巍², 郭媛媛¹, 周艳文¹, 吴法宇¹(

)

1 辽宁科技大学表面工程研究所鞍山 114051
2 辽宁荣信兴业电力技术有限公司鞍山 114051

Effect of Annealing Oxygen Partial Pressure on Transmittance and Conductivity of AZO Thin Films

Yanxue WANG¹, Ruiwu LI¹, Wei FAN², Yuanyuan GUO¹, Yanwen ZHOU¹, Fayu WU¹(

)

1 School of Surface Engineering Institute, University of Science and Technology Liaoning, Anshan 114051, China
2 Liaoning Rongxin Xingye Power Technology Co. Ltd., Anshan 114051, China

引用本文:

王艳雪, 李瑞武, 范巍, 郭媛媛, 周艳文, 吴法宇. 退火氧分压对AZO薄膜的透光和导电性能的影响[J]. 材料研究学报, 2018, 32(11): 861-866.
Yanxue WANG, Ruiwu LI, Wei FAN, Yuanyuan GUO, Yanwen ZHOU, Fayu WU. Effect of Annealing Oxygen Partial Pressure on Transmittance and Conductivity of AZO Thin Films[J]. Chinese Journal of Materials Research, 2018, 32(11): 861-866.

全文: PDF(3716 KB) HTML

摘要:

在室温下采用射频磁控溅射粉末靶在玻璃基底上制备掺铝氧化锌(AZO)薄膜,采用扫描电镜、X射线衍射仪、紫外可见分光光度计和霍尔效应仪等手段表征和分析了薄膜的微观结构和光电性能,研究了退火氧分压对薄膜光电性能的影响。结果表明：退火后的AZO薄膜仍具有c轴择优取向的六方纤锌矿结构,薄膜的表面致密光滑;随着退火氧分压的降低AZO薄膜光学带隙变窄、透光率有所降低,但是其值均高于80%;随着退火氧分压的降低载流子浓度显著升高,电导特性明显改善,电阻率最低达到2.1×10^-3 Ω·cm。

关键词 ：无机非金属材料, 掺铝氧化锌薄膜, 磁控溅射, 氧分压, 电学性能, 光学性能

Abstract：

The transparent conductive films aluminum doped zinc oxide (AZO) was prepared on a glass substrate by RF magnetron sputtering from powder targets. AZO films were annealed by controlling the temperature and oxygen partial pressure. The morphology and microstructure,as well as the optical and electrical properties of the as-deposited and annealed films were characterized by Scanning electron microscope(SEM),X-ray diffraction (XRD),UV-visible Spectrophotometer and the Hall-effect measure-ment．The results show that annealed AZO film keep a (002) preferred orientation hexagonal wurtzite structure, and the smooth and compact surface. With the decrease of annealing oxygen partial pressure the optical band gap becomes narrow, and the transmittance of AZO films decreases slightly but still above 80%. As the annealing oxygen partial pressure decreases, the electrical conductivity of AZO films is significantly improved with evident increase of charge carrier concentration. The resistivity is reduced to 2.1×10^-3 Ω·cm.

Key words： Inorganic non-metallic materials AZO film RF magnetron sputtering oxygen partial pressure electrical property optical property

收稿日期: 2018-04-10

ZTFLH:

TB34

基金资助:国家自然科学基金(51502126和51672119),辽宁科技大学重点实验室开放课题(USTLKFSY201705)

作者简介:

作者简介王艳雪,女,1991年生,硕士生

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https://www.cjmr.org/CN/10.11901/1005.3093.2018.265 或 https://www.cjmr.org/CN/Y2018/V32/I11/861

图1 在不同氧分压下退火的AZO薄膜的SEM照片

图2 在不同氧分压下退火的AZO薄膜的X射线衍射谱

图3 在不同氧分压下退火的薄膜的透射光谱

表1 在不同氧分压下退火的AZO薄膜的光电性能

图4 在不同温度退火的AZO薄膜的SEM照片

图5 在不同温度退火的AZO薄膜的X射线衍射谱

图6 在不同温度退火的薄膜的透射光谱

表2 退火温度不同的AZO薄膜的光电性能

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