退火温度对铜铟镓硒薄膜电学性能的影响

doi:10.11901/1005.3093.2014.233

材料研究学报

2014, Vol. 28

Issue (10): 745-750 DOI: 10.11901/1005.3093.2014.233

本期目录 | 过刊浏览

退火温度对铜铟镓硒薄膜电学性能的影响

欧阳良琦,赵明,庄大明(

),孙汝军,郭力,李晓龙,曹明杰

清华大学材料学院先进成形制造教育部重点实验室北京 100084

Influence of Annealing Temperature on Electric Properties of CuIn_1-_xGa_xSe₂ Thin Films

Liangqi OUYANG,Ming ZHAO,Daming ZHUANG(

),Rujun SUN,Li GUO,Xiaolong LI,Mingjie CAO

Key Laboratory for Advanced Materials Processing Technology of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084

引用本文:

欧阳良琦,赵明,庄大明,孙汝军,郭力,李晓龙,曹明杰. 退火温度对铜铟镓硒薄膜电学性能的影响[J]. 材料研究学报, 2014, 28(10): 745-750.
Liangqi OUYANG, Ming ZHAO, Daming ZHUANG, Rujun SUN, Li GUO, Xiaolong LI, Mingjie CAO. Influence of Annealing Temperature on Electric Properties of CuIn_1-_xGa_xSe₂ Thin Films[J]. Chinese Journal of Materials Research, 2014, 28(10): 745-750.

全文: PDF(2710 KB) HTML

摘要:

使用磁控溅射铜铟镓硒(CuIn_1-xGa_xSe₂, CIGS)四元陶瓷靶材制备沉积态预制膜, 在240-550℃对预制膜进行退火处理, 着重研究了退火温度对薄膜电学性能(载流子浓度及迁移率)的影响。结果表明: 退火温度低于270℃时薄膜中存在CuSe低电阻相, CIGS薄膜的载流子浓度在10¹⁷-10¹⁹ cm^-3, 迁移率在0.1 cm²V^-1s^-1左右, 不适于作为太阳电池的吸收层; 当退火温度高于410℃时薄膜中不存在CuSe相, 薄膜具有10 cm²V^-1s^-1左右的较高迁移率, 载流子浓度在10¹⁴-10¹⁷ cm^-3; 退火温度高于410℃时, 随着退火温度的升高薄膜晶粒长大, 结晶性增强, 此时薄膜内部缺陷减少, 载流子浓度升高; 对于用作太阳电池吸收层的CIGS, 从载流子浓度及迁移率的角度评判, 合适的退火温度区间为450-550℃。

关键词 ：无机非金属材料, 太阳电池, 铜铟镓硒, 溅射, 电学性能

Abstract：

The as-deposited CuIn_1-_xGa_xSe₂ (CIGS) thin films were fabricated by magnetron sputtering from a quaternary CIGS target, and then the as-deposited films were annealed in a temperature range from 240℃ to 550℃. The effect of the annealing temperature on the electric properties (carrier concentration and carrier mobility) of the films was investigated in particular. The results show that when the annealing temperature was lower than 270℃, the highly conducive CuSe phase existed in the films leading to a high carrier concentration (10¹⁷-10¹⁹ cm^-3) and a low carrier mobility (~0.1 cm²V^-1s^-1). These films are not suited for CIGS absorber usage. When the annealing temperature was higher than 410℃, the carrier mobility of the films was high about 10 cm²V^-1s^-1 and the carrier concentration was in a range of 10¹⁴-10¹⁷ cm^-3 due to the disappearance of the CuSe phase. When the annealing temperature was higher than 410℃, with the increase of the annealing temperature the grains grew larger and the crystallinity of the films was enhanced, which could reduce the defects in the films and result in the decrease of the carrier concentration. From the aspect of the carrier concentration and the carrier mobility, the appropriate annealing temperature for fabricating the absorbers of the CIGS solar cells is from 450℃ to 550℃.

Key words： inorganic non-metallic materials solar cells CIGS sputtering electric property

收稿日期: 2014-05-08

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https://www.cjmr.org/CN/10.11901/1005.3093.2014.233 或 https://www.cjmr.org/CN/Y2014/V28/I10/745

表1 制备铜铟镓硒薄膜的溅射工艺参数

图1 退火温度对CIGS薄膜的载流子浓度和迁移率的影响

图2 退火温度不同的CIGS薄膜的XRD衍射图谱

图3 退火温度对CIGS薄膜第一主强峰半高宽以及第二与第一主强峰峰强之比的影响

图4 退火温度不同的CIGS薄膜的Raman散射图谱

图5 沉积态薄膜和不同硒化温度CIGS薄膜的表面形貌

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