1 Laegu Kang, Byoung Hun Lee, Wen-Jie Qi, Yongjoo Jeon, Nieh. R, Gopalan. S, Onishi. K, Lee. J.C, Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric, IEEE Electron Device Letters, 21(4), 181(2000)

2 Jan Schmidt, Mark Kerr and Andres Cuevas, Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/pasma SiN stacks, Semicond. Sci. Technol., 16, 164(2001)

3 Wilson W. Wenas, Syarif Riyadi, Carrier transport in high-efficiency ZnO/SiO2/Si solar cells, Soler Energy Materials & Soalr Cells, 90, 3261(2006)

4 He Bo, Ma Zhongquan, Xu Jing, Zhao Lei, et.al, Realization and characterization of an ITO/AZO/SiO2/p-Si SIS heterojunction, Superlattices and Microstructures, 46, 664(2009)

5 L.Shen, H.W.Du, H.Ding, J.Tang, Z.Q.Ma, Regiondependent behavior of I-V characteristics in n-ZnO:Al/p-Si contacts, Materials Science in Semiconductor Processing, 13(5-6), 339(2011)

6 M.Uematsu, H.Kageshima, K.Shiraishi, Microscopic mechanism of thermal silicon oxide growth, Computational Materials Science, 24, 229(2002)

7 Romuald B. Beck, Formation of ultrathin silicon oxidesmodeling and technological constraints, Materals Science in Semiconductor Processing, 6, 49(2003)

8 H.Cui, C.X.Wang, G.W.Yang, D.Jiang, Origin of unusual rapid oxidation process for ultrathin oxidation of silicon, Applied Physics Letters, 93, 203113(2008)

9 L.Shen, Z.Q.Ma, C.Shen, F.Li, Bo.He, F.Xu, Studies on fabrication and characterization of a ZnO/p-Si-based solar cell, Superlattices and Microstructures, 48, 426(2011)

10 Min Hung Lee, Cheng-Ya Yu, Fon Yuan, K.F. Chen, Chang Chi Lai, and Chee Wee Liu, Reliability improvement of Rapid Thermal Oxide using gas switching, IEEE Transactions on Semiconductor Manufacturing, 16, 4(2003)

11 M.P.Seah, S.J.Spencer, Ultrathin SiO2 on Si IV. Intensity measurement in XPS and deduced thickness linearity, Surf. Interface Anal., 35, 515(2003)

12 Fen Liu, Zhijuan Zhao, Liangzhong Zhao and Hai Wang, Considerations of the intermediate oxides via XPS elemental quantitative analysis for the thickness measurements of ultrathin SiO2 on Si, Surf. Interfac Anal., 43, 1015(2011)

13 Hill J.M., Royce D.G., Fadley C.S. et al. Properties of oixdized silicon as determined by angular dependent Xray photoelectron spectroscopy, Chem. Phys. Lett., 44, 225 (1976)

14 Eugene A. Irene, Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime, Solid-State Electronics, 45, 1207(2001)

15 LIU Enke, ZHU Bingsheng, LUO Jinsheng, The Physics of Semiconductors (Beijing, Publishing House of Electronics Industry, 2011) p.258-261

(刘恩科, 朱秉升, 罗晋生, 半导体物理学, 第7版(北京,  电子工业出版社, 2011) p.258-261)

16 K.Hirose, K.Sakano, K.Takahashi, T.Hattori, Characterization of SiO2/Si interfaces by using X-ray photoelectron spectroscopy time-dependent measurement, Surface Science,

507-510, 906(2002)

17 J.E.Demuth, W.J.Thompson, N.J.DiNardo, R.Imbihl, Photoemission-based photovoltage probe of semiconductor surface and interface electronic structure, Phys. Rev. Lett., 56, 1408(1986)

18 K.Z.Zhang, J.N.Greeley, Mark M.Banaszak Holl, The role of extra-atomic relaxation in determining Si 2p bingding energy shifts at silicon/silicon oxide interfaces, J. Appl. Phys., 82, 5(1997)

19 Burak Ulgut, Sefik Suzer, XPS studies of SiO2/Si system under external bias, J. Phys. Chem. B, 107, 2939(2003)