B2O3和Al2O3共同掺杂ZnO压敏陶瓷的性能

doi:10.11901/1005.3093.2020.208

材料研究学报

2021, Vol. 35

Issue (2): 110-114 DOI: 10.11901/1005.3093.2020.208

研究论文

本期目录 | 过刊浏览

B₂O₃和Al₂O₃共同掺杂ZnO压敏陶瓷的性能

王昊¹, 赵洪峰¹(

), 康加爽¹, 周远翔², 谢清云³

^1.新疆大学电气工程学院电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室乌鲁木齐 830046
^2.清华大学电机工程与应用电子技术系电力系统及发电设备控制和仿真国家重点实验室北京 100084
^3.西安西电避雷器有限公司西安 710200

Properties of ZnO Varistor Ceramics Co-doped with B₂O₃ and Al₂O₃

WANG Hao¹, ZHAO Hongfeng¹(

), KANG Jiashuang¹, ZHOU Yuanxiang², XIE Qingyun³

^1.The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment, School of Electrical Engineering, Xinjiang University, Urumqi 830046, China
^2.State Key Laboratory of Power System and Power Generation Equipment Control and Simulation, Department of Electrical Engineering and Applied Electronics Technology, Tsinghua University, Beijing 100084, China
^3.Xidian Surge Arrester Co. Ltd. , Xi'an 710200, China

引用本文:

王昊, 赵洪峰, 康加爽, 周远翔, 谢清云. B₂O₃和Al₂O₃共同掺杂ZnO压敏陶瓷的性能[J]. 材料研究学报, 2021, 35(2): 110-114.
Hao WANG, Hongfeng ZHAO, Jiashuang KANG, Yuanxiang ZHOU, Qingyun XIE. Properties of ZnO Varistor Ceramics Co-doped with B₂O₃ and Al₂O₃[J]. Chinese Journal of Materials Research, 2021, 35(2): 110-114.

全文: PDF(2849 KB) HTML

摘要:

研究了B₂O₃(B)和Al₂O₃(Al)共掺杂对ZnO压敏陶瓷电学性能和微观结构的影响。结果表明，共掺杂B和Al的ZnO压敏陶瓷，具有低泄漏电流、高非线性和低剩余电压等优良电性能。B和Al的掺杂率为3.0%(摩尔分数)和0.015%(摩尔分数)的ZnO压敏陶瓷，其最佳样品的电参数为：击穿电压E_{1 mA}＝475 V/mm；泄漏电流J_L=0.16 μA/cm²；非线性系数α=106；剩余电压比K = 1.57。

关键词 ：无机非金属材料, ZnO压敏陶瓷, 电学性能, 微观结构

Abstract：

The effect of B₂O₃ (B) and Al₂O₃ (Al) co-doping on electrical properties and microstructure of ZnO varistor ceramics are investigated. ZnO varistors doped with B and Al have excellent electrical properties such as low leakage current, high nonlinearity and low residual voltage. The electrical parameters of the ZnO varistor ceramics doped with 3.0% B and 0.015% Al(mole fraction)are as follows: breakdown voltage E_{1 mA}=475 V/mm; leakage current J_L=0.16 μA/cm²; nonlinear coefficient α=106; residual voltage ratio K=1.57.

Key words： inorganic non-metallic materials ZnO varistor ceramics electrical properties microstructure

收稿日期: 2020-06-02

ZTFLH:

TM283

基金资助:国家自然科学基金(51762038)

作者简介: 王昊，男，1995年生，硕士

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https://www.cjmr.org/CN/10.11901/1005.3093.2020.208 或 https://www.cjmr.org/CN/Y2021/V35/I2/110

B content /%, mole fraction	d / $μ$ m	N_d /10²⁷m^-3	N_i /10¹⁸m^-2	$Φ b$ /eV	E_b /V·mm^-1	J_L /μA·cm^-2	α	K	Grain boundary resistance/kΩ
0.0	6.58	1.86	1.81	1.66	470	4.06	51	1.57	29.69
1.5	6.61	1.98	2.03	1.98	474	2.52	67	1.58	45.14
3.0	6.62	2.59	2.86	2.98	475	0.16	106	1.57	74.68
4.5	6.66	2.23	2.27	2.17	479	0.25	86	1.59	52.53

表1 不同B掺杂量样品的电性能和微观结构参数

图1 不同B掺杂量样品的E-J图

图2 不同B掺杂量样品的C-V曲线

图3 不同B掺杂量样品的SEM照片

图4 典型样品的能量色散X射线光谱图像

图5 不同B掺杂量样品的致密度-非线性折线图

图6 不同B掺杂量样品的XRD衍射图

图7 B、Al共掺杂ZnO压敏陶瓷样品的阻抗等效电路图(a)和不同B掺杂量样品的复阻抗图像(b)

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