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材料研究学报  2008, Vol. 22 Issue (4): 433-438    
  论文 本期目录 | 过刊浏览 |
BaTiO3-R2O3-MgO系介质的稀土掺杂效应
李波;张树人;钟朝位
电子科技大学 微电子与固体电子学院 电子薄膜与集成器件国家重点实验室
Doping effect of rare-earth elements in BaTiO3-R2O3-MgO dielectrics
LI Bo
电子科技大学 微电子与固体电子学院 电子薄膜与集成器件国家重点实验室
引用本文:

李波; 张树人; 钟朝位 . BaTiO3-R2O3-MgO系介质的稀土掺杂效应[J]. 材料研究学报, 2008, 22(4): 433-438.
, , . Doping effect of rare-earth elements in BaTiO3-R2O3-MgO dielectrics[J]. Chin J Mater Res, 2008, 22(4): 433-438.

全文: PDF(1206 KB)  
摘要: 研究了BaTiO3-R2O3-MgO(R=La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Y, Er, Yb) 系介质的稀土掺杂效应. 结果表明, 大半径稀土离子在BaTiO3中形成元素均匀性分布, 并促进晶粒的长大; 而小半径稀土离子能产生明显的细晶效应, 在晶界局部富集而偏析出现焦绿石型第二相晶粒R2Ti2O7. 随着镧系收缩, 稀土掺杂BaTiO3陶瓷的绝缘电阻率明显提高, 而稀土离子在BaTiO3中的固溶度大致呈降低趋势. 大半径稀土掺杂材料的ε-T$曲线呈现单峰效应且居里点下移, 而小半径稀土掺杂材料为双峰效应且居里点上升, ΔC/C-T$稳定性显著提高达到X8R.
关键词 无机非金属材料钛酸钡稀土氧化物    
Abstract:The doping effect of rare-earth elements was systematically investigated in BaTiO3-R2O3-MgO (R = La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Y, Er, Yb) dielectrics. Due to the different site occupancy and compensation model, the smaller-ions show higher insulation resistivity compared with the larger-ions. SEM-EDS indicate that the diffusivity and solubility of rare-earth ions in BaTiO3 decrease as the ionic radius decreases, so the larger-ions distribute uniformly in BT grains and promote grain-growth, while the smaller-ions stay dominantly in the shell and boundary regions and form core-shell-structured fine grains. Moreover the smallest ions segregate along the triple point and the secondary phase R2Ti2O7 appears. The results show the larger-ion-doped samples exhibit single-peak ε–T, but the smaller-ion-doped samples present double-peak ε–T and improve stability of ΔC/C–T meeting X8R code.
Key wordsBaTiO3    rare-earth oxide    multilayer ceramic capacitor    microscope distribution    secondary phase    solid s
收稿日期: 2007-08-27     
ZTFLH:  TM534  
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