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材料研究学报  2008, Vol. 22 Issue (4): 399-404    
  论文 本期目录 | 过刊浏览 |
脉冲偏压对矩形平面大弧源离子镀TiN膜层性能的影响
林永清;巩春志;魏永强;田修波;杨士勤;关秉羽;于传跃
哈尔滨工业大学材料学院
Influence of Pulsed Bias Voltage on Surface Properties of TiN Thin Films Deposited by Arc Ion Plating with Big Rectangle Shaped Targets
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引用本文:

林永清; 巩春志; 魏永强; 田修波; 杨士勤; 关秉羽; 于传跃 . 脉冲偏压对矩形平面大弧源离子镀TiN膜层性能的影响[J]. 材料研究学报, 2008, 22(4): 399-404.
, , , , , , . Influence of Pulsed Bias Voltage on Surface Properties of TiN Thin Films Deposited by Arc Ion Plating with Big Rectangle Shaped Targets[J]. Chin J Mater Res, 2008, 22(4): 399-404.

全文: PDF(1153 KB)  
摘要: 采用矩形平面大弧源离子镀技术在201奥氏体不锈钢基体表面制备TiN硬质薄膜, 研究了脉冲偏压对TiN膜层的表面形貌、相结构、硬度和耐磨性能的影响. 结果表明, 随着脉冲偏压的增大, 薄膜中大颗粒的数目先增加后减少, 这是大颗粒受到离子拖曳力和电场力双重作用的结果. 存在一个最佳的脉冲偏压, 使得制备出的TiN膜层具有较高的I(111)/I(200)比例和较高的耐磨性. 脉冲偏压为-300 V时制备的TiN膜层具有最好的综合性能.
关键词 无机非金属材料离子镀矩形靶    
Key words
收稿日期: 2007-04-20     
ZTFLH:  TB321  
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