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材料研究学报  2008, Vol. 22 Issue (2): 130-134    
  论文 本期目录 | 过刊浏览 |
衬底温度对钇稳定氧化锆薄膜择优生长的影响
文波;苏晓东
苏州大学物理科学与技术学院江苏省薄膜材料重点实验室
引用本文:

文波; 苏晓东 . 衬底温度对钇稳定氧化锆薄膜择优生长的影响[J]. 材料研究学报, 2008, 22(2): 130-134.

全文: PDF(969 KB)  
摘要: 使用脉冲激光沉积(PLD)技术在Si(100)衬底上沉积钇稳定的氧化锆(YSZ)薄膜, 用XRD分析薄膜的结晶取向, SEM和AFM观测薄膜表面形貌, 研究了在200--650℃的不同衬底温度下薄膜的择优生长. 结果表明: 衬底温度较低的YSZ薄膜为非晶组织, 衬底温度为300--500℃时YSZ晶粒以表面能低的 (111)面首先择优生长, 衬底温度超过550℃后晶粒活化能提高而使表面能较高的(100) 晶粒择优生长. YSZ薄膜是典型的岛状三维生长模式, 较高的衬底温度有利于原子在衬底表面迁移和重排结晶长大. 同其它沉积技术相比, 用PLD技术能在比较低的衬底温度下在Si(100)表面原位外延生长出较高质量的YSZ薄膜.
关键词 无机非金属材料YSZ薄膜PLD沉积    
Key words
收稿日期: 2007-06-20     
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