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| C面蓝宝石衬底上6H-SiC薄膜的低压化学气相外延生长与表征 |
| 郑海务; 苏剑峰; 顾玉宗; 张杨; 傅竹西 |
| 中国科学技术大学物理系 合肥; 河南大学物理与电子学院 开封; |
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引用本文:
郑海务; 苏剑峰; 顾玉宗; 张杨; 傅竹西. C面蓝宝石衬底上6H-SiC薄膜的低压化学气相外延生长与表征[J]. 材料研究学报, 2008, 22(1): 37-41.
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3 SU Jianfeng,ZHENG Halwu,LIN Bixia,ZHU Junjie, FU Zhuxi,Effect of carbonization on the heteroepitax- ial growth of SiC films on Si substrates,Chinese Journal of Materials Research,20(3),231(2006) (苏剑峰，郑海务，林碧霞，朱俊杰，傅竹西，硅衬底碳化对异质外延SiC薄膜结构的影响，材料研究学报，20(3)，231(2006))
4 WANG Jianping,HAO Yue,PENG Jun,ZHU Zuoyun, ZHANG Yonghua,XRD and SIMS analysis of single crys- tal SiC films grown on sapphire,Acta Physica Sinica, 51(8),1793(2002) (王剑屏，郝跃，彭军，朱作云，张永华，蓝宝石衬底上异质外延生长碳化硅薄膜的研究，物理学报，51(8)，1793(2002))
5 SUN Lan,CHEN Ping,HAN Ping,ZHENG Youdou, SHI Jun,ZHU Jia,ZHU Shunming,GU Shulin,ZHANG Rong,Single-crystalline 6H-SiC heteroepitaxial growth by chemical vapor deposition on sapphire substrates at re- duced temperatures,Journal of Functional Materials,35, 192(2004) (孙澜，陈平，韩平，郑有炓，史君，朱嘉，朱顺明，顾书林，张荣，蓝宝石衬底上6H-SiC单晶薄膜的化学气相淀积生长，功能材料，35，192(2004))
6 M.C.Luo,J.M.Li,Q.W.Wang,G.S.Sun,L.Wang,G.R.Li, Y.P.Zeng,L.Y.Lin,Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitri- dation,J.Cryst.Growth,249,1(2003)
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9 H.W.Zheng,J.J.Zhu,Z.X.Fu,B.X.Lin,X.G.Li,Heteroepi- taxial growth and characterization of 3C-SiC films on Si substrates using LPVCVD,J.Mater.Sci.Technol.,21, 536(2005)
10 WANG Yuxia,GUO Zhen,HE Haiping,CAO Ying, TANG Honggao,Epitaxial growth of(0001)oriented 6H- SiC Films on Si(111)Substrate by organic sol-gel film an- nealing,Acta Physica Sinica,50(2),256(2001) (王玉霞，郭震，何海平，曹颖，汤洪高，在Si(111)上用有机溶胶一凝胶甩膜热解法制备(0001)定向的6H-SiC薄膜，物理学报，50(2)，256(2001))
11 T.Ajagopalan,X.Wang,B.Lahlouh,C.Ramkumar, P.Dutta,S.Gangopadhyay,Low temperature deposition of nanocrystalline silicon carbide films by plasma en- hanced chemical vapor deposition and their structural and optical characterization,J.Appl.Phys.,94(8), 5252(2003)
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13 A.T.S.Wee,K.Li,C.C.Tin,Surface chemical states on LPCVD-grown 4H-SiC epilayers,Appl.Surf.Sci.,126, 34(1998) |
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