材料研究学报  2004, Vol. 18 Issue (3): 310-314

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Si基微绝热结构PLZT厚膜红外探测器阵列

曾亦可;刘梅冬;黄焱球

华中科技大学

Infrared detector array with PLZT thick films on silicon--based microstructure tunnels

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华中科技大学

曾亦可; 刘梅冬; 黄焱球 . Si基微绝热结构PLZT厚膜红外探测器阵列[J]. 材料研究学报, 2004, 18(3): 310-314.

摘要 参考文献 相关文章 Metrics 全文: PDF(2046 KB)   摘要: 介绍了一种制备非致冷红外探测器阵列的新方法, 此方法避免了使用传统的微电子机械系统(MEMS)工艺来加工微桥. 研究了如何在Si基片表面形成ZnO膜层网格状结构的方法. ZnO纳米粉末和PLZT厚膜采用改进的溶胶--凝胶法制备. 表征了ZnO纳米粉末的表面形貌和PLZT厚膜的相组成, 测量了PLZT--8/53/47厚膜的铁电性和热释电性. 结果表明, ZnO纳米粉末的粒径为40$\sim$70 nm, PLZT--8/53/47厚膜为纯钙钛矿相, 其主结晶方向与底电极一致. PLZT--8/53/47厚膜具有优良的热释电性能, 其热释电系数$p$为8.21$\times$10$^{-8}$C/(cm$^{2}\cdot$℃), 而矫顽场较小, 25℃时+$E_{\rm c}$为32.0 kV/cm, 40℃时+$E_{\rm c}$仅为27.8 kV/cm. 关键词 ： 无机非金属材料,  非致冷红外探测器阵列,  溶胶     Abstract：A novel process for fabricating uncooled infrared detector array was introduced, instead of traditional technique used in the field of microelectromechanical systems (MEMS) in order to making self--support microbridge structures. The gridding method of ZnO layers prepared on Si substrate was developed. Both ZnO nanometer powders and PLZT thick films were prepared by improved sol--gel process. ZnO nanometer powders were characterized by TEM and PLZT thick films were analyzed by XRD. The ferroelectric and pyroelectric properties of PLZT--8/53/47 thick films were measured and studied. The results showed that grain size of ZnO nanometer powders ranged from 40 to 70 nm, and pure perovskite PLZT--8/53/47 was found and crystallization of PLZT--8/53/47 thick films was same as bottom electrode in direction. The thick film has high pyroelectric coefficient and low coercive field. The pyroelectric coefficient $p$ is 8.21$\times$10$^{-8}$C/(cm$^{2}\cdot$℃), and the coercive field +$E_{\rm c}$ is 32.0 kV/cm and 27.8 kV/cm, at 25℃ and 40℃ respectively.\par Key words： inorganic non-metallic materials    uncooled infrared detector array    sol-gel    PLZT thick films    pyroelect 收稿日期: 2004-07-19      ZTFLH:  TB321   服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 曾亦可 刘梅冬 黄焱球 44.8K 链接本文: https://www.cjmr.org/CN/Y2004/V18/I3/310 1 M.R.Raddy, J. Mate. 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