磁控溅射制备非晶铟镓锌氧化物薄膜的电学性能研究

doi:10.11901/1005.3093.2014.333

材料研究学报

2015, Vol. 29

Issue (1): 51-54 DOI: 10.11901/1005.3093.2014.333

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磁控溅射制备非晶铟镓锌氧化物薄膜的电学性能研究

曹明杰,赵明,庄大明(

),郭力,欧阳良琦,李晓龙,宋军

先进成形制造教育部重点实验室清华大学材料学院北京 100084

Electronic Properties of Amorphous Indium-gallium-zinc Oxide Thin Film Fabricated by Magnetron Sputtering

Mingjie CAO,Ming ZHAO,Daming ZHUANG(

),Li GUO,Liangqi OUYANG,Xiaolong LI,Jun SONG

Key Lab of Advanced Processing and Manufacturing, Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

引用本文:

曹明杰,赵明,庄大明,郭力,欧阳良琦,李晓龙,宋军. 磁控溅射制备非晶铟镓锌氧化物薄膜的电学性能研究[J]. 材料研究学报, 2015, 29(1): 51-54.
Mingjie CAO, Ming ZHAO, Daming ZHUANG, Li GUO, Liangqi OUYANG, Xiaolong LI, Jun SONG. Electronic Properties of Amorphous Indium-gallium-zinc Oxide Thin Film Fabricated by Magnetron Sputtering[J]. Chinese Journal of Materials Research, 2015, 29(1): 51-54.

全文: PDF(675 KB) HTML

摘要:

采用中频交流磁控溅射法制备非晶铟镓锌氧化物(IGZO)薄膜, 用XRD、XRF、Hall测试等手段进行表征, 研究了溅射电流、氧气流量等工艺参数对其电学性能的影响。结果表明, 制备出的IGZO薄膜均为非晶结构, 成分与靶材基本一致, 电学性能对溅射电流不敏感, 而氧气流量的改变可显著影响薄膜的载流子浓度和Hall迁移率。随着氧气流量的增加, 薄膜的载流子浓度先增加后减小, 而Hall迁移率随着载流子浓度的提高而增加。透过率随着氧气流量的增大先提高然后稳定在90%以上。

关键词 ：无机非金属材料, IGZO薄膜, 非晶态半导体, 磁控溅射, 迁移率

Abstract：

Amorphous indium-gallium-zinc oxide (a-IGZO) thin films were fabricated using mid-frequency AC magnetron sputtering deposition with variable oxygen flow rate and sputtering current. The influence of processing parameters on the electronic properties of the films was investigated by means of analyses of XRD and XRF, as well as Hall Effect measurement. The results show that all the samples are amorphous with compositions roughly equal to that of the target. The change of sputtering current had no significant effect on the electronic properties. But the carrier concentration of the samples exhibited an obvious change as the increase of the O₂ flow rate, which slightly increased and then rapidly decreased. The samples with higher carrier concentration exhibited larger Hall mobility. The average transmission of the IGZO thin films deposited with large O₂ flow rate is above 90%.

Key words： inorganic non-metallic materials IGZO thin film amorphous semiconductors magnetron sputtering mobility

收稿日期: 2014-07-08

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表1 不同溅射电流下制备得到的薄膜成分(%, 原子比)

图1 溅射电流不同IGZO薄膜电阻率和载流子浓度

图2 IGZO薄膜的XRD衍射图谱

图3 氧气流量对薄膜电阻率和载流子浓度的影响

图4 IGZO薄膜Hall迁移率与载流子浓度的关系

图5 氧气流量对IGZO薄膜透过率的影响

1	Kamiya T,Nomura K, Hosono H, Present status of amorphous In-Ga-Zn-O thin-film transistors, Science and Technology of Advanced Materials, 11(4), 44305(2010)
2	Nomura K,Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors, Nature, 432(7016), 488(2004)
3	Yabuta H,Sano M, Abe K, Aiba T, Den T, Kumomi H, Nomura K, Kamiya T, Hosono H, High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering, Applied Physics Letters, 89, 112123(2006)
4	Kamiya T,Nomura K, Hosono H, Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping, Journal of Display Technology, 5(7), 273(2009)
5	Park J S,Maeng W, Kim H, Park J, Review of recent developments in amorphous oxide semiconductor thin-film transistor devices, Thin Solid Films, 520(6), 1679(2012)
6	CHEN Jiangbo,Investigation on fabrication and properties of InGaZnO thin films by pulsed laser deposition, Ph D thesis, Beijing, Beijing University of Technology (2012)
6	(陈江博,PLD制备InGaZnO 薄膜及其物理性质研究,博士学位论文,北京, 北京工业大学(2012))
7	Suresh A,Gollakota P, Wellenius P, Dhawan A, Muth J F, Transparent, high mobility InGaZnO thin films deposited by PLD, Thin Solid Films, 516(7), 1326(2008)
8	Hsu H H,Chang C Y, Cheng C H, Room-temperature flexible thin film transistor with high mobility, Current Applied Physics, 13(7), 1459(2013)
9	Fung T,Abe K, Kumomi H, Kanicki J, Electrical instability of RF sputter amorphous In-Ga-Zn-O thin-film transistors, Journal of Display Technology, 5(12), 452(2009)
10	Jun-Young H,Jae-Hong J, Hee-Hwan C, Kang-Woong L, Jong-Huyn S, Min-Ki R, Sang-Hee K P, Chi-Sun H, Woo-Seok C, Effects of the composition of sputtering target on the stability of InGaZnO thin film transistor, Thin Solid Films, 519(20), 6868(2011)
11	Kim G H,Du Ahn B, Shin H S, Jeong W H, Kim H J, Kim H J, Effect of Indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors, Applied Physics Letters, 94, 233501(2009)
12	Tsay C Y,Yan T Y, Solution processed amorphous InGaZnO semiconductor thin films and transistors, Journal of Physics And Chemistry of Solids, 75(1), 142(2014)
13	Pu H F,Zhou Q F, Yue L, Zhang Q, Solution-processed Indium Gallium Zinc oxide thin-film transistors with infrared irradiation annealing, Semiconductor Science and Technology, 28(10), 105002(2013)
14	Nomura K,Takagi A, Kamiya T, Ohta H, Hirano M, Hosono H, Amorphous oxide semiconductors for high-performance flexible thin-film transistors, Japanese Journal of Applied Physics, 45(5B), 4303(2006)
15	Kagan C R, Andry P, WANG Jun, LIAO Yanping, Thin-Film Transistors (Beijing, Publishing House of Electronics Industry, 2008) p. 190
15	(Kagan Cherie R., Andry Paul 编, 王军, 廖燕平译, 薄膜晶体管 (TFT)及其在平板显示中的应用 (北京,电子工业出版社, 2008) p. 190)
16	Takagi A,Nomura K, Ohta H, Yanagi H, Kamiya T, Hirano M, Hosono H, Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4, Thin Solid Films, 486(1-2), 38(2005)

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