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材料研究学报  2014, Vol. 28 Issue (5): 333-338    DOI: 10.11901/1005.3093.2013.763
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纳米多晶钨膜中He相关缺陷对H滞留的影响*
谢莎1,邓爱红1,2(),王康1,王玲2,李悦1,王勇1,汪渊2
1. 四川大学物理科学与技术学院 成都 610064
2. 四川大学原子核科学与技术研究所 辐射物理及技术教育部重点实验室 成都 610064
Influence of Helium-Related Defects on Hydrogen Retention in Nano-Polycrystalline Tungsten Films
Sha XIE1,Aihong DENG1,2,**(),Kang WANG1,Ling WANG2,Yue LI1,Yong WANG1,Yuan WANG2
1. College of Physical Science and Technology, Sichuan University, Chengdu 610064
2. Key Laboratory for Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064
引用本文:

谢莎,邓爱红,王康,王玲,李悦,王勇,汪渊. 纳米多晶钨膜中He相关缺陷对H滞留的影响*[J]. 材料研究学报, 2014, 28(5): 333-338.
Sha XIE, Aihong DENG, Kang WANG, Ling WANG, Yue LI, Yong WANG, Yuan WANG. Influence of Helium-Related Defects on Hydrogen Retention in Nano-Polycrystalline Tungsten Films[J]. Chinese Journal of Materials Research, 2014, 28(5): 333-338.

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摘要: 

用磁控溅射方法制备纳米多晶钨膜, 采用X射线衍射(XRD), 扫描电子显微镜(SEM), 弹性反冲探测(ERD)和慢正电子束分析(SPBA)等手段研究了在高能He+和H+依次对其辐照后He相关缺陷对H滞留的影响。结果表明, 注He+钨膜在退火后从β型钨向α型钨转变; 钨膜中的He含量随着退火温度的提高而减少, 在873 K退火加剧钨膜中He原子的释放, 且造成钨膜空位型缺陷的增加和结构无序度的提高; 钨膜中的H滞留总量随着He滞留总量的减少略有下降。

关键词 金属材料磁控溅射钨膜慢正电子束分析HHe    
Abstract

The influence of helium-related defects on hydrogen retention in magnetron sputtered nano-polycrystalline tungsten films, which had been sequentially irradiated by high energy helium and hydrogen ions, was investigated by means of X-ray diffraction (XRD), scanning electron microscope (SEM), elastic recoil detection (ERD) and slow positron beam analysis (SPBA). The results show that the helium ion implanted tungsten films would transform from β-W to α-W after annealing. After annealing at 873 K the release of helium atoms increased dramatically, while the open-volume defects and the degree of structural disorders in the films increased. Furthermore, the total retention of hydrogen in tungsten films decreased slightly with the decreasing of helium content.

Key wordsmetallic materials    magnetron sputtered tungsten films    SPBA    hydrogen    helium
收稿日期: 2013-10-16     
基金资助:* 国家自然科学基金11275132资助项目。
图1  钨膜的SEM图, 纯钨膜截面(a), 在723 K退火表面(b), 在873 K退火表面(c, d)
图2  注He+钨膜在不同温度等时退火后注H+的XRD图谱, 未退火(A), 473 K退火(B), 723 K退火(C), 873 K退火(D), 只注H+(E)
图3  注He+钨膜在不同温度退火后注H+的He和H的ERD图谱以及注He+钨膜在不同温度退火后注H+的He和H的平均浓度
图4  注He+钨膜不同温度等时退火后注H+的S-E曲线图, (实线是VEPFIT程序的拟合结果)
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