二氧化硅基质包埋硅纳米晶的微观结构和发光性能

材料研究学报

2009, Vol. 23

Issue (4): 352-356

研究论文

本期目录 | 过刊浏览

二氧化硅基质包埋硅纳米晶的微观结构和发光性能

王乙潜¹; 梁文双¹; G.G.ROSS²

1.青岛大学国家重点实验室培育基地~青岛市宁夏路308号青岛 266071
2.INRS-EMT; 1650 boulevard Lionel-Boulet; Varennes; Canada J3X 1S2

Microstructure and optical properties of Si nanocrystals embedded in SiO₂film

WANG Yiqian¹; LIANG Wenshuang¹; ROSS Guy²

1.The Cultivation Base for State Key Laboratory; Qingdao University; No.308; Ningxia Road; Qingdao; 266071
2.INRS-EMT; 1650 boulevard Lionel-Boulet; Varennes; Canada; J3X 1S2

引用本文:

王乙潜梁文双 G.G.ROSS. 二氧化硅基质包埋硅纳米晶的微观结构和发光性能[J]. 材料研究学报, 2009, 23(4): 352-356.
, , . Microstructure and optical properties of Si nanocrystals embedded in SiO₂film[J]. Chin J Mater Res, 2009, 23(4): 352-356.

全文: PDF(1034 KB)

摘要:

利用离子注入和后续高温退火的方法制备了包埋在二氧化硅(SiO₂)基质中的硅纳米晶, 研究了不同离子注入浓度试样的微观结构和发光性能, 以及硅纳米晶的生长机理和发光机制. 结果表明: 较小的硅纳米晶(<5 nm)其生长机理符合Ostwald熟化机理, 较大的纳米晶(>10 nm)则是由多个小纳米晶粒通过孪晶组合或融合而成的; 离子注入浓度为8 ×10¹⁶cm^-2的样品其发光强度是离子注入浓度为3×10¹⁷cm ^-2样品发光强度的5倍；硅纳米晶内部的微观结构缺陷(如孪晶和层错)对其荧光强度有很大的影响.

关键词 ：无机非金属材料, 硅纳米晶, 电子显微学, 生长机理, 荧光光谱

Abstract：

Si nanocrystals have been fabricated in SiO₂ film using ion implantation followed by high-temperature annealing. The microstructure and optical properties of the samples with different Si⁺ implantation doses were investigated, and the growth mechanism and light emission mechanism were explored. The experimental results indicated that for small Si nanocrystals (<5 nm), the growth mechanism conforms to Ostwald ripening; while for the big ones (>10 nm), the coalescence of small nanoparticles through twinning is dominant. The
photoluminescence (PL) investigation showed that the PL spectrum intensity from the sample with an implantation dose of 3 ×10¹⁷/cm²dropped by a factor of 5 compared with that from the sample with an implantation dose of 8×10¹⁶/cm² . The correlation between microstructure and PL indicated that the microstructural defects, such as twinning and stacking faults inside the Si nanocrystals have a great influence on the PL intensity.

Key words： inorganic non-metallic materials Si nanocrystals transmission electron microscopy growth mechanism photoluminescence

收稿日期: 2009-01-08

ZTFLH:

O472

基金资助:

青岛大学引进人才科研启动基金06300701和加拿大国家自然科学基金STPGP307205-04资助项目.

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1 International Technology Roadmap for Semiconductors, 2005, website: http://www.itrs.net/Common/2005ITRS/Interconnect2005.pdf
2 T.S.Iwayama, S.Nakao, K.Saitoh, Visible photoluminescence in Si+–implanted thermal oxide films on crystalline Si, Appl. Phys. Lett., 65, 1814(1994)
3 Z.H.Lu, D.J.Lockwood, J.-M.Baribeau, Quantum confinement and light emission in SiO2/Si superlattices, Nature (London), 378, 258(1995)
4 S.Furukawa, T.Miyasato, Quantum size effects on the optical band gap of microcrystalline Si:H, Phys. Rev. B, 38, 5726(1998)
5 S.Hayashi, S.Tanimoto, M.Fujii, K.Yamamoto, Surface oxide layers of Si and Ge nanocrystals, Superlattices Microstruct., 8, 13(1990)
6 H.Takagi, H.Ogawa, Y.Yamazaki, A.Ishizaki, T.Nakagiri, Quantum size effects on photoluminescence in ultrafine Si particles, Appl. Phys. Lett., 56, 2379(1990)
7 Y.Q.Wang, R.Smirani, G.G.Ross, The effect of implantation dose on the microstructure of silicon nanocrystals in SiO2, Nanotechnology, 15, 1554 (2004)
8 F.Iacona, G.Franz`o, C.Spinella, Correlation between luminescence and structural properties of Si nanocrystals, J. Appl. Phys., 87, 1295(2000)
9 G.Franz`o, S.Boninelli, D.Pacifici, F.Priolo, F.Iacona, C.Bongiorno, Sensitizing properties of amorphous Si clusters on the 1.54 μm luminescence of Er in Si-rich SiO2, Appl. Phys. Lett., 82, 3871(2003)
10 F.Iacona, C.Bongiorno, C.Spinella, S.Boninelli, F.Priolo, Formation of evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films, J. Appl. Phys., 95, 3723(2004)
11 W.Ostwald, Z.Phys, Chem. (Leipzig), 34, 495(1900)
12 R.F.Pinizzotto, H.Yang, J.M.Perez, J.L.Coffer, J. Appl.Phys., 75, 4486(1994)
13 L.T.Canham, Luminescent bands and their proposed origins in highly porous silicon, Phys. Status Solidi B, 190, 9(1995)
14 L.N.Dinh, L.L.Chase, M.Balooch, W.J.Siekhaus, F.Wooten, Optical properties of passivated Si nanocrystals
and SiOx nanostructures, Phys. Rev. B, 54, 5029(1996)
15 T.Shimizu-Iwayama, N.Kurumado, D.E.Hole, P.D.Townsend, Optical properties of silicon nanoclusters
fabricated by ion implantation, J. Appl. Phys., 83, 6018(1998)
16 D.J.Eaglesham, A.E.White, L.C.Feldman, N.Moriya, D.C.Jacobson, Equilibrium shape of Si, Phys. Rev. Lett.,
70, 1643(1993)
17 W.Selke, P.M.Duxbury, Surface profile evolution above roughening, Z. Physik B, 94, 311(1994)
18 X.Yu, P.M.Duxbury, Kinetics of nonequilibrium shape change in gold clusters, Phys. Rev. B, 52, 2102(1995)

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