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Chinese Journal of Materials Research  2015, Vol. 29 Issue (8): 561-568    DOI: 10.11901/1005.3093.2014.566
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Oxidation Behavior of in-situ Synthesized MoSi2-SiC Composites at 700℃
Laiqi ZHANG(),Lihui DUAN,Junpin LIN
State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
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Laiqi ZHANG,Lihui DUAN,Junpin LIN. Oxidation Behavior of in-situ Synthesized MoSi2-SiC Composites at 700℃. Chinese Journal of Materials Research, 2015, 29(8): 561-568.

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Abstract  

The long-term air oxidation behavior of in situ synthesized composites MoSi2-SiC with different volume fractions of SiC at 700 ℃ for 1000 h was investigated. The disintegration (pest) of the composites has not been observed after oxidation for 1000 h. The oxidation resistance of composites is significantly higher than that of monolithic MoSi2. The in situ synthesized composite MoSi2-30%SiC possesses higher oxidation resistance than the traditional composite with the same chemical composition fabricated by hot-pressing the mixture of commercial powders of MoSi2 and SiC. The oxide scale formed on the prepared composite is only composed of amorphous silica, therefore, the oxidation reaction of the materials may mainly occur between MoSi2 and O2. Silicon and molybdenum may simultaneously be oxidized at 700℃ for the composite, however, due to the faster volatilization of MoO3, thereby a thin continuous and dense amorphous SiO2 protective scale is rapidly formed on the composite surface, so the composite exhibits excellent long-term oxidation resistance.
Key words:  materials failure and protection      MoSi2-SiC composite      synthesized in situ      oxidation behavior at low temperature      pest     
Received:  08 October 2014     
Fund: *Supported by National Natural Science Foundation of China No.50871012 and National Basic Research Program of China No.2011CB605502.
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Laiqi ZHANG
Lihui DUAN
Junpin LIN

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https://www.cjmr.org/EN/10.11901/1005.3093.2014.566     OR     https://www.cjmr.org/EN/Y2015/V29/I8/561

Fig.1  Oxidation kinetics curves of samples MoSiC10, MoSiC20, MoSiC30, MoSiC45, MS and WS at 700 ℃ for 1000 h (a) and the enlarged views of 0-100 h (b) and 0-20 h (c)
Fig.2  XRD spectra of samples WS, MS and MoSiC30 after oxidation for 1000 h
Fig.3  Si2p, Mo3d and O1s XPS narrow spectra of the oxide scale surfaces of MS, MoSiC10 and MoSiC30
Sample Element Binding energy /eV Corresponding phase Atom fraction/%
MS Mo3d 232.2 MoO3 0.50
Si2p 103.3 SiO2 28.12
O1s 532.2 SiO2 71.38
MoSiC10 Mo3d 0.25
Si2p 103.3 SiO2 32.11
O1s 532.2 SiO2 67.64
MoSiC30 Mo3d 0.15
Si2p 103.3 SiO2 29.79
O1s 532.2 SiO2 70.26
Table1  XPS analytical results of samples MS, MoSiC10 and MoSiC30
Fig.4  Macro surface morphologies of samples MoSiC10 (1), MoSiC20 (2), MoSiC30 (3), MoSiC45 (4), WS (5) and MS (6) oxidized at 700℃ for 1000 h
Fig.5  SEM surface morphologies of samples MoSiC10 (a), MoSiC20 (b), MoSiC30 (c), MoSiC45 (d), WS (e) and MS (f) oxidized at 700℃ for 1000 h
Fig.6  Schematic drawing of the oxidation mechanism of MoSi2-SiC composites at 700℃
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