Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition

doi:10.11901/1005.3093.2020.159

Chinese Journal of Materials Research

2020, Vol. 34

Issue (10): 744-752 DOI: 10.11901/1005.3093.2020.159

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Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition

ZHEN Longyun¹, PENG Peng², QIU Chenggong¹, ZHENG Beirong¹, ARMAOU Antonios¹^,³, ZHONG Rong¹(

)

1. College of Electricity and Mechanics, Wenzhou University, Wenzhou 325035, China
2. Shaanxi Institute of Advanced Optoelectronic Integrated Circuit Technologies, Xi'an 710119, China
3. Department of Chemical Engineering, Pennsylvania State University, University Park 16802, USA

Cite this article:

ZHEN Longyun, PENG Peng, QIU Chenggong, ZHENG Beirong, ARMAOU Antonios, ZHONG Rong. Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition. Chinese Journal of Materials Research, 2020, 34(10): 744-752.

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Abstract

Multilayered films of Al/AlN/GaN were deposited on a Si wafer by metal-organic chemical vapor deposition (MOCVD). The microstructure and crystallinity were characterized by means of optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffractometer (XRD), especially in terms of the mechanisms of nucleation and growth of the produced AlN and GaN films with the variations of trimethylaluminum (TMAl) flow during Al pre-deposition process. It was observed that the pre-deposited Al layer helps the nucleation and growth of AlN film and thereafter improves the quality of GaN film. When a thin Al layer was deposited at low TMAl flow, the quality of the AlN film depends on the competition between the nucleation and growth of the high crystallinity AlN thin film with the deposition of the formed clasters of low crystallinity AlN in the gas phase on the surface of silicon wafer. The quality of the AlN film increases with increasing TMAl flow, inducing the formation of GaN film with better quality. When the Al layer is too thick at high TMAl flow, the quality of the AlN film depends on the competition between the nucleation and growth of the high crystallinity AlN thin film with the meltback-etching of Al-Si on the wafer surface. The quality of the AlN film decreases with increasing TMAl flow, inducing the formation of GaN film with worse quality.

Key words: surface and interface in the materials growth mechanism MOCVD Al pre-deposition Si substrate GaN film

Received: 12 May 2020

ZTFLH:

O484.4

Fund: the Intergovernment International Science, Technology and Innovation Cooperation Key Project of the National Key R&D Programme(2016YFE0105900)

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	Longyun ZHEN
	Peng PENG
	Chenggong QIU
	Beirong ZHENG
	Antonios ARMAOU
	Rong ZHONG

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https://www.cjmr.org/EN/10.11901/1005.3093.2020.159 OR https://www.cjmr.org/EN/Y2020/V34/I10/744

Fig.1 AFM images of AlN buffer layers grown on the Si wafer after it has been pre-deposited of Al layer with TMAl flow of (a) 0 sccm, (b) 41.5 sccm, (c) 59.5 sccm, and (d) 77.5 sccm

Fig.2 Root-mean-square of surface roughness (R_RMS) of AlN buffer layers corresponding to different TMAl flow characterized by AFM directly

Fig.3 AlN buffer layers corresponding to different TMAl flow characterized by XRD (a) the rocking curves measured between the AlN (002) planes, (b) the FWHM of the rocking curves

Fig.4 OM images of GaN films corresponding to TMAl flow of (a) 0 sccm, (b) 41.5 sccm, (c) 59.5 sccm, and (d) 77.5 sccm

Fig.5 GaN films corresponding to different TMAl flow is characterized by XRD: (a) the rocking curves measured between the GaN (0002) planes, (b) the FWHM of the rocking curves

Type & No.	Reaction
G1	$A l C H 3 3 2 → 2 A l C H 3 3$
G2	$A l C H 3 3 → A l C H 3 2 + C H 3$
G3	$A l C H 3 2 → A l C H 3 + C H 3$
S1	$A l C H 3 3 + S → A l S + 3 C H 3$
S2	$A l C H 3 2 + S → A l S + 2 C H 3$
S3	$A l C H 3 + S → A l S + C H 3$

Table 1 Gas-surface reactions during Al pre-deposition

Type & No.	Reaction
G4	$A l C H 3 3 + N H 3 → C H 3 3 A l : N H 3$
G5	$C H 3 3 A l : N H 3 → A l C H 3 3 + N H 3$
G6	$C H 3 3 A l : N H 3 → A l C H 3 2 : N H 2 + C H 4$
G7	$C H 3 2 A l : N H 2 → A l N G + 2 C H 4$
S4	$A l S + N H 3 + 3 C H 3 → A l N S + 3 C H 4$
S5	$x A l S + y S i S → A l x S i y S$
S6	$2 x S i S + 2 y N H 3 → 2 S i x N y S + 3 y H 2$
S7	$A l N G + 2 S → A l N S$

Table 2 Gas-surface reactions during the growth of AlN buffer layer

Type & No.	Reaction
G8	$G a C H 3 3 → G a C H 3 2 + C H 3$
G9	$G a C H 3 2 → G a C H 3 + C H 3$
G10	$G a C H 3 3 + N H 3 → C H 3 3 G a : N H 3$
G11	$C H 3 3 G a : N H 3 → G a C H 3 3 + N H 3$
G12	$C H 3 3 G a : N H 3 → G a C H 3 2 : N H 2 + C H 4$
G13	$C H 3 2 G a : N H 2 → G a N G + 2 C H 4$
S8	$G a C H 3 3 + S → G a S + 3 C H 3$
S9	$G a C H 3 2 + S → G a S + 2 C H 3$
S10	$G a C H 3 + S → G a S + C H 3$
S11	$G a S + N H 3 + 3 C H 3 → G a N S + 3 C H 4$
S12	$x G a S + y S i S → G a x S i y S$
S13	$2 x S i S + 2 y N H 3 → 2 S i x N y S + 3 y H 2$
S14	$G a N G + 2 S → G a N S$

Table 3 Gas-surface reactions during the growth of GaN film

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