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Chinese Journal of Materials Research  2022, Vol. 36 Issue (1): 8-12    DOI: 10.11901/1005.3093.2021.254
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Promotion Effect of α-Al2O3 Seeds on Low-temperature Deposition of α-Al2O3 Films by Reactive Sputtering
LI Xiuxian, QIU Wanqi(), JIAO Dongling, ZHONG Xichun, LIU Zhongwu
School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
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LI Xiuxian, QIU Wanqi, JIAO Dongling, ZHONG Xichun, LIU Zhongwu. Promotion Effect of α-Al2O3 Seeds on Low-temperature Deposition of α-Al2O3 Films by Reactive Sputtering. Chinese Journal of Materials Research, 2022, 36(1): 8-12.

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Abstract  

The films of corundum structure Al2O3 were successfully deposited on gold foil with pre-deposited α-Al2O3 seeds at low-temperature by reactive RF (Radio Frequency) sputtering with Al+α-Al2O3(15% α-Al2O3) target. The surface morphology, phase constituent and chemical composition of the as-deposited films were characterized by SEM, GIXRD and EDS. Results show that films of single α-Al2O3 with corundum-like crystallographic structure could be deposited at 560℃ on Si(100) substrate by reactive sputtering with Al+α-Al2O3 as composite target, while the substrate temperature even could be reduced to 500℃ for gold foil with pre-deposited α-Al2O3 seeds (the density of α-Al2O3 seeds is ~106/cm2) by reactive sputtering with pure Al as target. The results of the above two deposition methods proved that α-Al2O3 seeds may be favorable for the deposition of single phase α-Al2O3 films on the substrate at lower temperature.

Key words:  surface and interface in the materials      α-Al2O3 films      reactive sputtering      α seeds      low-temperature deposition     
Received:  19 April 2021     
ZTFLH:  TQ174  
Fund: National Natural Science Foundation of China(51971095);Guangdong Natural Science Foundation(2020A1515011087)
About author:  QIU Wanqi, Tel: 13924233479, E-mail: mewqqiu@scut.edu.cn

URL: 

https://www.cjmr.org/EN/10.11901/1005.3093.2021.254     OR     https://www.cjmr.org/EN/Y2022/V36/I1/8

Fig.1  Schematic of magnetron sputtering system
Temperature /℃TargetCompositions of the films /%, atom fraction
OAlO / Al
500Al59.7840.221.48
560Al60.1439.861.51
560Al/α-Al2O359.5240.481.47
Table 1  Elementary compositions of the films deposited at different temperatures by sputtering Al target and Al+α-Al2O3 composite target
Fig.2  GIXRD patterns of the alumina films deposited by reactive sputtering Al target at 500℃ and 560℃ and Al+α-Al2O3 composite target at 560℃
Fig.3  XRD pattern of the alumina powders
Fig.4  GIXRD patterns of the alumina films deposited by sputtering Al target on gold foil substrate
Fig.5  Distribution of α-Al2O3 seeds pre-planting on surface of gold foil substrate
Fig.6  Morphology of α-Al2O3 seed deposited at 600℃ for 15 min (a), 30 min (b), 60 min (c) and 120 min (d)
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