退火温度对金属催化四面体非晶碳转变为石墨烯过程的影响

doi:10.11901/1005.3093.2017.107

材料研究学报

2018, Vol. 32

Issue (5): 341-347 DOI: 10.11901/1005.3093.2017.107

研究论文

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退火温度对金属催化四面体非晶碳转变为石墨烯过程的影响

刘盼盼^1,², 李汉超², 杨林¹, 郭婷², 柯培玲², 汪爱英²(

)

1 沈阳工业大学材料科学与工程学院沈阳 110870
2 中国科学院宁波材料技术与工程研究所中国科学院海洋新材料与应用技术重点实验室浙江省海洋材料与防护技术重点实验室宁波 315201

Influence of Annealing Temperature on the Metal-catalyzed Crystallization of Tetrahedral Amorphous Carbon to Graphene

Panpan LIU^1,², Hanchao LI², Lin YANG¹, Ting GUO², Peiling KE², Aiying WANG²(

)

1 School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China
2 Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technologies and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

引用本文:

刘盼盼, 李汉超, 杨林, 郭婷, 柯培玲, 汪爱英. 退火温度对金属催化四面体非晶碳转变为石墨烯过程的影响[J]. 材料研究学报, 2018, 32(5): 341-347.
Panpan LIU, Hanchao LI, Lin YANG, Ting GUO, Peiling KE, Aiying WANG. Influence of Annealing Temperature on the Metal-catalyzed Crystallization of Tetrahedral Amorphous Carbon to Graphene[J]. Chinese Journal of Materials Research, 2018, 32(5): 341-347.

全文: PDF(3023 KB) HTML

摘要:

设计了金属催化剂Ni/四面体非晶碳(ta-C)/基底三层结构,使用磁过滤阴极真空电弧设备制备了ta-C薄膜,用电子束蒸镀技术制备Ni薄膜,并对其进行快速热处理调控非晶碳转变石墨烯的过程,重点研究了热处理温度对石墨烯生长的影响。结果表明,沉积态的ta-C和Ni层均表面平整、均匀致密,其中Ni薄膜呈(111)晶面择优取向生长,为石墨烯的高质量生长提供了条件。同时,退火温度显著影响了非晶碳的石墨烯转变,当退火温度高于400℃时Ni表面能生成多层石墨烯,在500°C保温15 min可制备出质量较高的多层石墨烯。

关键词 ：无机非金属材料, 多层石墨烯, 快速热处理, Ni催化, 四面体非晶碳

Abstract：

In order to investigate the transformation behavior of tetrahedral amorphous carbon (ta-C) into graphene, a three-layered structure material of metal catalyst Ni/ tetrahedral amorphous carbon (ta-C)/Si-substrate was prepared via a two-step process, namely ta-C film was firstly deposited on Si-substrate with a home-made filtered cathodic vacuum arc system, then on which (111) preferential oriented Ni-film was further deposited by electron beam evaporation method. Afterwards the as prepared three-layered structure material was treated via a controlled rapid thermal annealing method in order to transform (ta-C) into graphene. Meanwhile,the effect of annealing temperature on the graphene growth was focused. Results show that both the deposited films of ta-C and Ni all present smooth and uniform surface morphology, which provide the premise for growing high-quality graphene. Furthermore, the annealing temperature plays great role on the crystallization of amorphous carbon into graphene. When the annealing temperature was above 400°C, the multilayered graphene could form on Ni surface, and the better quality of graphene was obtained through annealing at 500°C for 15 min.

Key words： inorganic non-metallic materials multilayer graphene rapid thermal annealing Ni catalyze tetrahedral amorphous carbon

收稿日期: 2017-01-24

基金资助:资助项目国家自然科学优秀青年基金(51522106),国家自然科学基金(51371187),国家重点基础研究发展计划(2013CB632302),浙江省公益项目(2016C31121)

作者简介:

作者简介刘盼盼,女,1991年生,硕士

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https://www.cjmr.org/CN/10.11901/1005.3093.2017.107 或 https://www.cjmr.org/CN/Y2018/V32/I5/341

图1 非晶碳转变石墨烯生长过程的示意图

图2 沉积态ta-C薄膜的C1s的XPS拟合谱

图3 沉积态ta-C膜的拉曼光谱

图4 ta-C薄膜和沉积Ni薄膜后的AFM形貌图

图5 在不同温度退火样品的SEM表面形貌图

图6 在不同温度退火样品的XRD谱图(RT表示沉积态镀在ta-C上的Ni膜)

图7 在不同温度退火样品的拉曼光谱图和拟合后峰比值

图8 在500℃退火保温15 min的样品截面HRTEM,插图为石墨烯的层间距测量图

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