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THE ION SENSITIVE BEHAVIOR OF Ta_2O_5 MEMBRANE |
WU Chongruo; LIU Gang; LIN Haian; QIU Jiezheng (Department of Electronic Engineering; Southeast University) |
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Cite this article:
WU Chongruo; LIU Gang; LIN Haian; QIU Jiezheng (Department of Electronic Engineering; Southeast University). THE ION SENSITIVE BEHAVIOR OF Ta_2O_5 MEMBRANE. Chin J Mater Res, 1994, 8(5): 449-451.
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Abstract The H+ sensitive behavior of Ta2O5 has ben reported on the letter. The magnetron-sputtering method was chosen for the Ta2O5 membranedeposition. C-V measurments of MIS structures were uesd for evaluatingthe stability of the membranes. It is shown that the
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Received: 25 October 1994
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