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| Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion |
Yongping WANG,Zijun DING,Bao ZHU,Wenjun LIU,Shijin DING( ) |
| State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China |
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Cite this article:
Yongping WANG,Zijun DING,Bao ZHU,Wenjun LIU,Shijin DING. Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion. Chinese Journal of Materials Research, 2019, 33(1): 9-14.
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Abstract TaN films were deposited on monocrystalline silicon wafer via plasma enhanced atomic layer deposition with Ta[N(CH3)2]5 as precursor and NH3 plasma as coreactant. The as deposited films were characterized by means of atomic force microscopy, X-ray photoelectron spectroscopy, four-point probe and X-ray reflection. The results show that the as-deposited film consists mainly of TaN with small quantities of C and O. As the deposition temperature increases from 250oC to 325oC, the ratio of Ta/N increases from 46:41 to 55:35, and the C-content (atomic fraction) decreases from 6% to 2%. Meanwhile, the resistivity of the film gradually decreases from 0.18 Ω?cm to 0.044 Ω?cm, and the film density increases from 10.9 g/cm3 to 11.6 g/cm3. After annealing at 400oC for 30 min, the film density shows an increment of ~0.28 g/cm3 on average, and the film resistivity decreases to 0.12-0.029 Ω?cm. Further, the barrier performance test results indicate that the TaN film of 3 nm in thickness deposited at 250oC demonstrates a perfect barrier function after annealing at 500oC for 30 min.
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Received: 11 January 2018
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| Fund: National Key Technologies R & D Program of China(2015ZX02102-003) |
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