Optical and Electrical Properties of Oxygen-controlled In2O3 Film

doi:10.11901/1005.3093.2020.250

Chinese Journal of Materials Research

2021, Vol. 35

Issue (5): 394-400 DOI: 10.11901/1005.3093.2020.250

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Optical and Electrical Properties of Oxygen-controlled In₂O₃ Film

SUN Maolin¹, GONG Zhen¹, WANG Shiwen², YIN Hang¹, LI Ruiwu¹, ZHANG Zheng¹, LI Yutong¹, WU Fayu¹(

)

^1.School of Materials and Metallurgy, Liaoning University of Science and Technology, Anshan 114051, China
^2.Quality Inspection and Measurement Center of Anshan Iron & Steel Co. Ltd. , Anshan 114000, China

Cite this article:

SUN Maolin, GONG Zhen, WANG Shiwen, YIN Hang, LI Ruiwu, ZHANG Zheng, LI Yutong, WU Fayu. Optical and Electrical Properties of Oxygen-controlled In₂O₃ Film. Chinese Journal of Materials Research, 2021, 35(5): 394-400.

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Abstract

The difference of oxygen acting mechanisms between the as-deposited and as-annealed In₂O₃ films under the oxygen-controlled conditions was investigated by the microstructure as well as optical and electrical properties. Both kinds of oxygen-controlled behaviors could effectively improve lattice order and reduce oxygen vacancies in In₂O₃ films, which narrowed optical band gap, decreased carrier concentration and increased mobility. Oxygen with a high activity was injected into films in a non-equilibrium manner during plasma-deposited process, and oxygen with a low activity by the equilibrium way accessed in films during annealing process. As a result, under different oxygen acting mechanism, the as-annealed In₂O₃ film had less structural defects and more oxygen vacancies than that of the as-deposited film by plasma sputtering, and in turn, had better light-transmittance and electrical conductance. Finally, oxygen-controlled behavior in indium oxide film underlies optical and electrical characteristics.

Key words: inorganic non-metallic materials In₂O₃ film oxygen-controlled sputtering oxygen-controlled annealing

Received: 23 June 2020

ZTFLH:

O484.5

Fund: National Natural Science Foundation of China(51502126);Natural Science Foundation of Liaoning Province(20180550802)

About author: WU Fayu, Tel: 15842065451, E-mail: fayuwu@ustl.edu.cn

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	Maolin SUN
	Zhen GONG
	Shiwen WANG
	Hang YIN
	Ruiwu LI
	Zheng ZHANG
	Yutong LI
	Fayu WU

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https://www.cjmr.org/EN/10.11901/1005.3093.2020.250 OR https://www.cjmr.org/EN/Y2021/V35/I5/394

Table 1 Sputtering parameters of In₂O₃ film

Fig.1 Annealing curve (a) and SEM images of In₂O₃ film prepared in pure Ar atmosphere (b), in the condition of oxygen partial pressure 1.0×10^-2 Pa (c) and annealed under oxygen partial pressure 1.0×10^-2 Pa (d)

Fig.2 XRD pattern of In₂O₃ film under different processes

Fig.3 Light-Transmittance spectra (a) and optical band gap (b) of In₂O₃ film

Fig.4 Resistivity (a), sheet resistance (b), carrier concentration (c) and mobility (d) of In₂O₃ thin films under different processes

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