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Studies on Microstructure Evolution of Inverted Pyramid–shaped Arrays Prepared by Wet Etching in TMAH Solution Containing IPA |
XIAO Ting1, LIU Bo1, WANG Xinlian2, WANG Chunfen3, REN Ding1 |
1.Key Laboratory of Radiation and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064
2.Department of Math and Physics, Henan University of Urban Construction, Pingdingshan 467001
3.Institute of Luoyang Ship Materials, China Shipbuilding Heavy Industry, Luoyang 471039 |
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Cite this article:
XIAO Ting LIU Bo WANG Xinlian WANG Chunfen REN Ding. Studies on Microstructure Evolution of Inverted Pyramid–shaped Arrays Prepared by Wet Etching in TMAH Solution Containing IPA. Chin J Mater Res, 2011, 25(5): 495-499.
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Abstract The inverted pyramid-shaped arrays with smooth surface are studied using anisotropic wet etching in TMAH solution containing IPA, which were prepared on (100) orientation silicon wafers with the arrays of 10 μm×10 μm windows. Etching rates and anisotropic factor of the monocrystalline silicon are reduced by adding IPA to TMAH solution in comparison with pure TMAH. It is generally thought that the side facets of inverted pyramid–shaped structures are bounded by (111) planes, but this research indicates that inverted pyramid-shaped structures undergo dramatic changes in shape. At the beginning of etching, the side facets of the inverted pyramid-shaped structures go through the transformation of the (567) facets into (111) planes, then the etching planes deviate from (111) planes, exposing (443) planes.
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Received: 18 July 2011
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Fund: Supported by National Natural Science Foundation of China Nos.11005076 and 11075112, Open Fund of Key Laboratory of Radiation and Technology of Education Ministry of China Nos.2011–7 and 2011–6, and Doctoral Fund of Ministry of Education of China No. 20100181120112. |
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