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| Self--assembled growth of ordered Si--based nanometer luminescent materials |
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| 1.河北大学; 2.中国科学院半导体研究所 |
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Cite this article:
. Self--assembled growth of ordered Si--based nanometer luminescent materials. Chin J Mater Res, 2004, 18(5): 449-460.
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Abstract The study of the structural characterizations, physical properties and fabricated
methods on the Si--based nanometer materials has attracted much attention because
of their potential applications in the optoelectronic--integrated technology.
Self--assembled growth methods are of increasing interest as a main formed technology
of high quality nanostructures such as nanoquantum dots, nanoclusters and nanoscale
films. In particular, self--assembled formations of the nanometer materials with
controlled crystallite size and density distribution are very important for
optoelectronic device applications. Two routes for the fabrication of these materials
were proposed in this paper. First, controlling the orderliness of preferential
nucleated sites on solid--state surface can obtain the materials. Second, controlling
the orderliness of nucleated process during self--assembled growth will form them.
New progress of these fabricated methods was reviewed, and the tendency of development
in the near future was predicated.
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Received: 04 November 2004
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