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| Infrared detector array with PLZT thick films on silicon--based microstructure tunnels |
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| 华中科技大学 |
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Cite this article:
. Infrared detector array with PLZT thick films on silicon--based microstructure tunnels. Chin J Mater Res, 2004, 18(3): 310-314.
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Abstract A novel process for fabricating uncooled infrared detector array was introduced,
instead of traditional technique used in the field of microelectromechanical systems
(MEMS) in order to making self--support microbridge structures. The gridding method of
ZnO layers prepared on Si substrate was developed. Both ZnO nanometer powders and PLZT
thick films were prepared by improved sol--gel process. ZnO nanometer powders were
characterized by TEM and PLZT thick films were analyzed by XRD. The ferroelectric and
pyroelectric properties of PLZT--8/53/47 thick films were measured and studied. The
results showed that grain size of ZnO nanometer powders ranged from 40 to 70 nm,
and pure perovskite PLZT--8/53/47 was found and crystallization of PLZT--8/53/47
thick films was same as bottom electrode in direction. The thick film has high
pyroelectric coefficient and low coercive field. The pyroelectric coefficient $p$ is
8.21$\times$10$^{-8}$C/(cm$^{2}\cdot$℃), and the coercive field +$E_{\rm c}$ is
32.0 kV/cm and 27.8 kV/cm, at 25℃ and 40℃ respectively.\par
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Received: 19 July 2004
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