Crystallization properties of Sn--doped Ge--Sb--Te phase--change films

Chin J Mater Res

2004, Vol. 18

Issue (2): 181-186 DOI:

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Crystallization properties of Sn--doped Ge--Sb--Te phase--change films

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中国科学院上海光学精密机械研究所

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. Crystallization properties of Sn--doped Ge--Sb--Te phase--change films. Chin J Mater Res, 2004, 18(2): 181-186.

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Abstract Sn--doped Ge2Sb2Te5 thin films were prepared by RF-sputtering. The effect of Sn-content on their crystallization properties was studied by XRD and DSC. The XRD spectra of the films in the as-deposited and heat-treated states showed that the films changed from amorphous to crystalline states due to heat-treatment and Sn-Te phase appeared. Using DSC data of the amorphous film materials, the activation energies were calculated by measuring the peak crystallization temperatures at different heating rates. It was found that the Ge-Sb-Te-Sn samples have higher activation energy of crystallization than that of the Ge2Sb2Te5 sample.It is concluded from these results that Sn-doping can increase the crystallization rate of the Ge2Sb2Te5 phase-change material, and thereby increase the erasing speed of the material for rewritable optical storage.

Key words: inorganic non-metallic materials Ge2Sb2Te5 Sn-doping thermal phase-change activation energy of cryst

Received: 21 May 2004

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https://www.cjmr.org/EN/ OR https://www.cjmr.org/EN/Y2004/V18/I2/181

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