|
|
几种单晶半导体材料在压痕下的变形与断裂行为比较 |
尧志刚; 朱晓飞 ; 张广平 |
中国科学院金属研究所沈阳材料科学国家(联合)实验室 沈阳110016 |
|
Comparison of indentation-induced deformation and fracture of several kinds of semiconductor single crystals |
YAO Zhigang ; ZHU Xiaofei; ZHANG Guangping |
Shenyang National Laboratory for Materials Science; Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110016 |
引用本文:
尧志刚 朱晓飞 张广平. 几种单晶半导体材料在压痕下的变形与断裂行为比较[J]. 材料研究学报, 2009, 23(2): 180-186.
,
.
Comparison of indentation-induced deformation and fracture of several kinds of semiconductor single crystals[J]. Chin J Mater Res, 2009, 23(2): 180-186.
1 K.E.Petersen, Silicon as a mechanical material, Processding of the IEEE, 70, 420(1982)
2 S.Adachi, GaAs, AlAs, and AlxGa1−xAsB: Material parameters for use in research and device applications, J Appl Phys, 58, R1(1985)
3 I.Yonenaga, U.Onose, K.Sumino, Mechanical properties of GaAs crystals, J. Mater. Res., 2, 252(1987)
4 T.P.Pearsall, Properties, Processing and Applications of Indium Phosphide, New EMIS Proceedings Series, (London, INSPEC, 1999) p.68
5 S.M.Spearing, Materials issues in microelectromechanical systems (MEMS), Acta Mater, 48, 179(2000)
6 S.Koubaiti, J.J.Couderc, C.Levade, G.Vanderschaeve, Photoplastic effect and Vickers microhardness in III-V and II-VI semiconductor compounds, Mater Sci and Eng A, 234-236, 865(1997)
7 R.Navamathavan, D.Arivuoli, G.Attolini, C.Pelosi, C.K.Choi, Mechanical properties of some binary, ternary and quaternary III-V compound semiconductor alloys, Physica B: Condensed Matter, 392, 51(2007)
8 S.Wang, P.Pirouz, Mechanical properties of undoped GaAs. III: Indentation experiments, Acta Mater, 55, 5526(2007)
9 G.M.Pharr, Measurement of mechanical properties by ultra-low load indentation, Mater. Sci. and Eng. A, 253, 151(1998)
10 I.Yonenaga, Mechanical Properties and Dislocation Dynamics in III-V Compounds, J. Phys. III, 7, 1435(1997)
11 I.Yonenaga, T.Suzuki, Indentation hardnesses of semiconductors and a scaling rule, Philos. Mag. Lett., 82, 535(2002)
12 E.Le Bourhis, G.Patriarche, Plastic deformation of IIIV semiconductors under concentrated load, Progress in Crystal Growth and Characterization of Materials, 47, 1(2003)
13 L.J.Vandeperre, F.Giuliani, S.J.Lloyd, W.J.Clegg, The hardness of silicon and germanium, Acta Mater, 6307(2007)
14 A.Kailer, Y.G.Gogotsi, K.G.Nickel, Phase transformations of silicon caused by contact loading, J Appl Phys, 81, 3057(1997)
15 F.Cleri, S.Yip, D.Wolf, S.R.Phillpot, Atomic-scale mechanism of crack-tip plasticity: Dislocation nucleation and crack-tip shielding, Phys. Rev. Lett., 79, 1309(1997)
16 R.Perez, P.Gumbsch, Directional anisotropy in the cleavage fracture of silicon, Phys. Rev. Lett., 84, 5347(2000)
17 F.Ebrahimi, L.Kalwani, Fracture anisotropy in silicon single crystal, Mater Sci and Eng A, 268, 116(1999)
18 R.F.Cook, Strength and sharp contact fracture of silicon, J Mater Sci, 41, 841(2006)
19 J.J.Wortman, R.A.Evans, Youngs Modulus, Shear Modulus, and Poissons Ratio in Silicon and Germanium, J Appl Phys, 36, 153(1965)
20 Y.T.Cheng, C.M.Cheng, Relationships between hardness, elastic modulus, and the work of indentation, Appl Phys Lett, 614(1998)
21 Y.T.Cheng, C.M.Cheng, Scaling, dimensional analysis, and indentation measurements, Mater Sci and Eng R, 91(2004)
22 K.Zeng, E.Soderlund, A.E.Giannakopoulos, D.J.Rowcliffe, Controlled indentation: A general approach to determine mechanical properties of brittle materials, Acta Mater, 44, 1127(1996)
23 B.R.Lawn, A.G.Evans, D.B.Marshall, Elastic/Plastic Indentation Damage in Ceramics: the Median/Radial Crack System, J. Am. Ceram. Soc., 63, 574(1980)
24 B.R.Lawn, E.R.Fuller, Equilibrium penny-like cracks in indentation fracture, J. Mater. Sci., 10, 2016(1975) |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
|
Shared |
|
|
|
|
|
Discussed |
|
|
|
|