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反应烧结多孔碳化硅的高温氧化行为 |
郑传伟; 杨振明; 张劲松 |
中国科学院金属研究所 沈阳 110016 |
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The High Temperature Oxidation Behavior of Reaction–bonded Porous Silicon Carbide Ceramics |
ZHENG Chuanwei; YANG Zhenming; ZHANG Jinsong |
Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110016 |
引用本文:
郑传伟 杨振明 张劲松. 反应烧结多孔碳化硅的高温氧化行为[J]. 材料研究学报, 2010, 24(1): 103-107.
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The High Temperature Oxidation Behavior of Reaction–bonded Porous Silicon Carbide Ceramics[J]. Chin J Mater Res, 2010, 24(1): 103-107.
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