Crystallization kinetics of non-stoichiometric SbOx thin films

Chin J Mater Res

2004, Vol. 18

Issue (1): 1-5 DOI:

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Crystallization kinetics of non-stoichiometric SbOx thin films

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中国科学院上海光学精密机械研究所

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. Crystallization kinetics of non-stoichiometric SbOx thin films. Chin J Mater Res, 2004, 18(1): 1-5.

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Abstract Non-stoichiometric SbOx thin films were prepared by the method of reactive DC magnetron sputtering under different oxygen partial pressureS. X-ray diffraction (XRD) spectra of the as-deposited and annealed films showed that the films changed from amorphous to crystalline states due to the heat-treatment. The peak temperatures of crystallization at different heating rates were determined by using DSC (Differential Scanning Calorimeter) analysis. Based on the Kissinger formula, the crystallization activation energies of these amorphous films were calculated. The results showed that the activation energy increased with the increase of oxygen partial pressure, while the enthalpy difference between the as-deposited and the crystalline states decreased.

Key words: inorganic non-metallic materials SbOx thin films reactive sputtering XRD DSC crystallization kinetic

Received: 24 April 2003

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