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| Effect of B-doping on ultrananocrystalline diamond film |
| WANG Yuqian1; WANG Bing2; MENG Xiangqin2; GAN Kongyin2 |
1.School of Materials Science and Engineering; Southwest University of Science and Technology; Mianyang 621010
2.Institute of Applied Electrinics; CAEP; Mianyang 621900 |
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Cite this article:
WANG Yuqian WANG Bing MENG Xiangqin GAN Kongyin. Effect of B-doping on ultrananocrystalline diamond film. Chin J Mater Res, 2009, 23(3): 288-292.
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Abstract High-quality ultrananocrystalline diamond film was prepared with Ar/CH4/CO2 by using microwave plasma chemical vapor deposition (MPCVD) technology. The average size of the crystalline grains and surface roughness are about 7.480 nm and 15.72 nm, respectively. B-doped diamond thin film was synthesized by adding B2H6 into the gas resource. The results showed that within a certain limits along with the addition of B2H6, the grains size and surfaces roughness of the diamond thin films increased dramatically, and their crystallinity got better. The diamond thin film no longer had the characteristics of the ultrananocrystalline diamond film. Meanwhile, with the addition of B2H6, the diamond phase constitutes in these films increased gradually, and more obvious residual stress and better conductivity appeared at the same time.
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Received: 09 December 2008
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| Fund: Supported by National Natural Science Foundation of China No.10876032, and National High-Tech Research and Development Program of China No.20070202. |
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