Anti-oxidization and Electronic Properties of Ti Doped MoS2 Films

doi:10.11901/1005.3093.2020.169

Chinese Journal of Materials Research

2021, Vol. 35

Issue (1): 59-64 DOI: 10.11901/1005.3093.2020.169

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Anti-oxidization and Electronic Properties of Ti Doped MoS₂ Films

XIE Mingling¹, ZHANG Guang'an², SHI Xing¹, TAN Xi¹, GAO Xiaoping¹, SONG Yuzhe¹(

)

^1.Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China
^2.State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Lanzhou 730000, China

Cite this article:

XIE Mingling, ZHANG Guang'an, SHI Xing, TAN Xi, GAO Xiaoping, SONG Yuzhe. Anti-oxidization and Electronic Properties of Ti Doped MoS₂ Films. Chinese Journal of Materials Research, 2021, 35(1): 59-64.

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Abstract

Thin films of MoS₂ and Ti-MoS₂ were deposited on Si substrate by using magnetron sputtering respectively, and then oxidized in atmosphere with 70%RH at 28℃ for 360 h via a temperature and humidity chamber. Thereafter, the oxidation performance and electrical properties of the above two MoS₂ films were characterized by XRD, XPS, UV-Vis spectrophotometer and four-point probe method. The results show that the Ti doping can affect the crystal orientation of MoS₂ film, and the X-ray diffraction peaks of (110) and (100) of MoS₂ disappear after Ti doping. The films prepared with applied current of 0.6 A for Ti-target are amorphous. Whilst, the band gap of Ti-MoS₂ decrease and the conductivity increase for films, with the increasing applied current for the Ti target. The films are partially oxidized and present the composite state of MoS₂ and MoO₃ after oxidation in the atmosphere with 70%RH at 28℃ for 360 h, and the I_Mo-O/I_Mo-S ratio and band gap increase with the increasing applied current for the Ti target. Especially, the Ti-MoS₂ film, prepared with applied current of 0.4 A for the Ti target, exhibits the better chemical stability.

Key words: foundation discipline in material science MoS₂film magnetron sputtering anti-oxidization electrical property

Received: 19 May 2020

ZTFLH:

TH117

Fund: Youth Science and Technology Innovation Fund Project of Gansu Academy of Sciences(2018QN-04);Cooperation Project of Gansu Academy of Science(2017HZ-02);Innovative Team Construction Project of Gansu Academy of Science(2020CX005-01);Application Technology Research and Development Project of Gansu Academy of Sciences(2018JK-16)

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	Mingling XIE
	Guang'an ZHANG
	Xing SHI
	Xi TAN
	Xiaoping GAO
	Yuzhe SONG

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https://www.cjmr.org/EN/10.11901/1005.3093.2020.169 OR https://www.cjmr.org/EN/Y2021/V35/I1/59

Fig.1 Schematic of unbalanced magnetron sputtering

Fig.2 XRD patterns with the different Ti content of MoS₂ films

Fig.3 Reflection spectrum of pure MoS₂, 0.2A Ti-MoS₂, 0.4A Ti-MoS₂ and 0.6A Ti-MoS₂ before and after stored at 26℃, RH70% condition

Table 1 Electronic parameters of pure MoS₂, 02A Ti-MoS₂, 04A Ti-MoS₂and 06A Ti-MoS₂ before and after stored at 26℃, RH70% condition

Fig.4 XPS spectrum of MoS₂and Ti- MoS₂ film

Table 2 I_Mo-O/I_Mo-S ratio of MoS₂and Ti-MoS₂ films before and after stored at 26℃, RH70% condition

1	Spalvins T. Lubrication with sputtered MoS₂ films: Principles,operation, and limitations [J]. J. Mater. Eng. Perform., 1992, 1: 347
2	Zhu G B, Zhang D P, Qian J J. Research advances in molybdenum dissulfide-based nanomaterials in field of electrochemical sensing/hydrogen evolution [J]. J. Mater. Eng., 2019, 47: 20
	朱刚兵, 张得鹏, 钱俊娟. 二硫化钼基纳米材料在电化学传感/析氢领域的研究进展 [J]. 材料工程, 2019, 47: 20
3	Potoczek M, Przybylski K, Rekas M. Defect structure and electrical properties of molybdenum disulphide [J]. J. Phys Chem Solids, 2006, 67: 2528
4	Hao L, Liu Y, Du Y, et al. Highly enhanced H₂ sensing performance of few-layer MoS₂/SiO₂/Si heterojunctions by surface decoration of Pd nanoparticles [J]. Nanoscale Res. Lett., 2017, 12: 567
5	Wang A F, Zhang D J, Wu Y Z, et al. Effects of adding MoS₂ and graphite on tribological properties of Ni-Cr based self-lubricating composites [J]. Chinese Journal of Materials Research, 2010, 24: 464
	王爱芳, 张定军, 吴有智等. MoS₂和石墨对Ni-Cr基复合材料摩擦学性能的影响 [J]. 材料研究学报, 2010, 24: 464
6	Fleischauer P, Reinhold B. Chemical and structural effects on the lubrication properties of sputtered MoS₂ films [J]. Tribology T, 1988, 31: 239
7	Gardos M N. The synergistic effects of graphite on the friction and wear of MoS2 films in air [J]. Tribology T., 1988, 31: 214
8	Late D J, Liu B, Matte H S S R, et al. Hysteresis in single-layer MoS₂ field effect transistors [J]. Acs. Nano., 2012, 6: 5635
9	Chen M, Wi S, Nam H, et al. Effects of MoS₂ thickness and air humidity on transport characteristics of plasma-doped MoS2 field-effect transistors [J]. J. Vac Sci Technol B, 2014, 32: 06FF02
10	Moser J, Lévy F. Random stacking in MoS_2-_x sputtered thin films [J]. Thin. Solid Films, 1994, 240: 56
11	Lee W Y, More K L. Crystal orientation and near-interface structure of chemically vapor deposited MoS₂ films [J]. J. Mater Res, 1995, 10: 49
12	Oliver W C, Pharr G M. An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments [J]. J. Mater Res., 1992, 7: 1564
13	Serpo ne N, Lawless D, Khairutdinov R. Size effects on the photophysical properties of colloidal anatase TiO₂ particles: size quantization versus direct transitions in this indirect semiconductor [J]. J. Phys Chemistry, 1995, 99: 16646
14	Wen Y Y, Zeng X B, Chen X X, et al. Preparation and optical property of MoS₂ layered-nano film [J]. Scientia Sinica Technologica, 2016, 000: 731
	文杨阳, 曾祥斌, 陈晓晓等. 层状MoS2 纳米薄膜的制备及其光学特性 [J]. 中国科学. 技术科学, 2016, 000: 731
15	Ten Y. First-principles study of d₂ family doped molybdenum disulfide thin films [D]. Harbin: Harbin Engineering University. 2017
	滕悦. d₂族掺杂MoS2薄膜的第一性原理研究 [D]. 哈尔滨: 哈尔滨工程大学2017
16	Williamson I, Li S, Correa Hernandez A, et al. Structural, electrical, phonon, and optical properties of Ti- and V-doped two-dimensional MoS₂ [J]. Chem Phys Lett, 2017, 674: 157
17	Li H, Li X, Zhang G, et al. Exploring the tribophysics and tribochemistry of mos₂ by sliding mos₂/ti composite coating under different humidity [J]. Tribol Lett, 2017, 65: 38
18	Hao S, Yang B, Gao Y. Chemical vapor deposition growth and characterization of drop-like MoS₂/MoO₂ granular films [J]. phys status solidi B, 2016, 254: 1
19	Buck V. Preparation and properties of different types of sputtered MoS₂ films [J]. Wear, 1987, 114: 263
20	Lavik M T, Campbell M E. Evidence of crystal structure in some sputtered mos₂ films [J]. Tribol T, 1972, 15: 233
21	Fleischauer P D. Effects of crystallite orientation on environmental stability and lubrication properties of sputtered MoS₂ thin films [J]. Tribol T, 1984, 27: 82
22	Spirko J A, Neiman M L, Oelker A M, et al. Electronic structure and reactivity of defect MoS₂: I. Relative stabilities of clusters and edges, and electronic surface states [J]. Surf Sci, 2003, 542: 192
23	Erfanifam S, Mohseni S M, Jamilpanah L, et al. Tunable bandgap and spin-orbit coupling by composition control of MoS₂ and MoO_x(x=2 and 3) thin film compounds [J]. Mater Design, 2017, 122: 220

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