Structure and Thermoelectric Properties of Ag-doped SnSe Thin Films Deposited by Magnetron Sputtering

doi:10.11901/1005.3093.2020.021

Chinese Journal of Materials Research

2020, Vol. 34

Issue (8): 561-568 DOI: 10.11901/1005.3093.2020.021

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Structure and Thermoelectric Properties of Ag-doped SnSe Thin Films Deposited by Magnetron Sputtering

LI Guipeng¹, SONG Guihong¹(

), HU Fang¹, DU Hao², YIN Lisong³

1 School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China
2 Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110015, China
3 Faculty of Intelligent Manufacturing, Wuyi University, Jiangmen 520920, China

Cite this article:

LI Guipeng, SONG Guihong, HU Fang, DU Hao, YIN Lisong. Structure and Thermoelectric Properties of Ag-doped SnSe Thin Films Deposited by Magnetron Sputtering. Chinese Journal of Materials Research, 2020, 34(8): 561-568.

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Abstract

Ag-doped SnSe thermoelectric thin films were deposited by high vacuum magnetron sputtering using a powder sintered SnSe alloy target. The influence of Ag-doping on the surface and cross sectional morphology, phase composition and thermoelectric properties of the SnSe thin films were investigated by means of X-ray diffractometer (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS), as well as Seebeck coefficient/resistance analysis system LSR-3. The results show that the SnSe films are composed of SnSe phase of orthorhombic Pnma structure. The nano-sized Ag₃Sn phase exists in the films with Ag-doping. Compared with the film without Ag-doping, the resistivity and absolute value of Seebeck coefficient of the SnSe films with Ag-doping decrease significantly. In a certain doping range, the more Ag-doping is, the smaller the resistivity and the absolute value of the Seebeck coefficient are. Although the absolute value of the Seebeck coefficient of undoped films is high and the resistivity is relatively large, so the power factor is small. For the film with 7.97% Ag (in atomic fraction), the power factor reaches the maximum at 280℃ due to higher Seebeck coefficient absolute value and appropriate resistivity, accordingly, the maximum power factor is about 0.93 mW·m^-1·K^-2 at 280℃, which is 40% higher than that of undoped films (PF=0.61 mW·m^-1·K^-2). In conclusion, the appropriate amount of Ag-doping can effectively improve the thermoelectric properties (power factor) of the SnSe thin films by magnetron sputtering.

Key words: surface and interface in the materials thermoelectric materials SnSe films Ag doping Seebeck coefficient resistivity Ag₃Sn phase

Received: 16 January 2020

ZTFLH:

O613.52

Fund: National Natural Science Foundation of China(51772193);Research and Development Program Subsidized Projects in Key Areas of Guangdong Province(2106B01013003)

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	Guipeng LI
	Guihong SONG
	Fang HU
	Hao DU
	Lisong YIN

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https://www.cjmr.org/EN/10.11901/1005.3093.2020.021 OR https://www.cjmr.org/EN/Y2020/V34/I8/561

Table 1 Composition of SnSe film doped with different Ag content

Fig.1 XRD patterns of SnSe thin films deposited with different Ag contents (atomic fraction) (a), local XRD patterns (b) and elemental distribution of 4.42% Ag sample (c)

Table 2 Half height width and diffraction angle of the diffraction peak and grain size of SnSe thin films with different Ag content

Fig.2 Surface morphologies of SnSe thin films deposited with different Ag contents (atomic fraction) (a) 0% Ag, (b) 4.42% Ag, (c) 7.97% Ag, (d) 12.46% Ag, (e) 15.55% Ag

Fig.3 Fracture cross-sections of SnSe thin films deposited with different Ag contents (atomic fraction) (a) 0% Ag, (b) 4.42% Ag, (c) 7.97% Ag, (d) 12.46% Ag, (e) 15.55% Ag

Fig.4 Temperature dependence of the resistivity of SnSe thin films deposited with different Ag contents

Fig.5 Temperature dependence of the Seebeck coefficient of SnSe thin films deposited with different Ag contents

Fig.6 Temperature dependence of the power factor for SnSe thin films deposited with different Ag contents

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