Photovoltaic Properties of ITO/PZT-Ag2O/Pt  Ferroelectric Diodes

Chinese Journal of Materials Research

2013, Vol. 27

Issue (5): 544-548 DOI:

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Photovoltaic Properties of ITO/PZT-Ag₂O/Pt Ferroelectric Diodes

DAI Zhihua, BAO Yuwen, ZHANG Jingjiao, SU Xiaodong^** , ZHANG Lingjun

(Photovoltaic Research Institute of Soochow University & Canadian Solar Inc., Jiangsu Key Laboratory of Thin Films, Department of Physics of Soochow University, Suzhou 215006)

Cite this article:

DAI Zhihua, BAO Yuwen, ZHANG Jingjiao, SU Xiaodong, ZHANG Lingjun. Photovoltaic Properties of ITO/PZT-Ag₂O/Pt Ferroelectric Diodes. Chinese Journal of Materials Research, 2013, 27(5): 544-548.

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Abstract

PZT-Ag₂O ferroelectric films were prepared successfully on the transparent ITO conductive glass substrate. The phase structure and surface morphology of the thin films prepared on different substrate temperatures were investigated. The PZT-Ag₂O films showed good ferroelectric properties, and the ITO/PZT-Ag₂O/Pt diodes indicated excellent photoelectric response at the visible spectrum. More interestingly, its photo-generated short-circuit photocurrent and open-circuit voltage varied with the poling voltages, and it mainly attributed to the ferroelectric depolarization field in the poled PZT-Ag₂O films. A possible mechanism concerning the photovoltaic effect in the ITO/PZT-Ag₂O/Pt diode characteristics was discussed. The magnitude of depolarization fields is varied with the applied voltages, resulting in hysteresis loop between the photo-generated short-circuit photocurrent or open-circuit voltage and applied voltages.

Key words: inorganic non-metallic materials PZT-Ag₂O films ITO glass substrate hysteresis loop ferroelectric photovoltaic property

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	DAI Zhihua
	BAO Yuwen
	ZHANG Jingjiao
	SU Xiaodong
	ZHANG Lingjun

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https://www.cjmr.org/EN/ OR https://www.cjmr.org/EN/Y2013/V27/I5/544

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