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| Influence of Rapid Thermal Annealing on Ge Quantum Dots Crystal Quality |
| WEI Rongshan, DING Xiaoqin, HE Minghua |
| College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108 |
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Cite this article:
WEI Rongshan DING Xiaoqin HE Minghua. Influence of Rapid Thermal Annealing on Ge Quantum Dots Crystal Quality. Chin J Mater Res, 2011, 25(3): 259-262.
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Abstract Multilayers of Ge quantum dots were grown on Si substrate by UHV/CVD. The Ge composition and strain relaxation in Ge dots by a rapid thermal annealing (RTA) treatment at different conditions were characterized by DCXRD and Raman spectrum, and the influence of rapid thermal annealing on Ge quantum dots crystal quality was investigated. The results show that the Ge composition decreased and strain relaxation in Ge dots increased at higher annealing temperature. The Ge dots were almost completely strain relaxed by RTA treatment at 1000oC for 20 s.
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Received: 04 January 2011
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| Fund: Supported by National Natural Science Foundation of China No.61006003 and Natural Science Foundation of Fujian Province No.2009J05143. |
| 1 HUANG Changjun, The study of self-assembled Ge quantum dots in Ge/Si multilayer structure, Ph.D. Dissertation, Institute of Semiconductors, Chinese Academy of Sciences(2002) (黄昌俊, Ge/Si材料系自组装Ge量子点研究, 博士学位论文, 中国科学院半导体研究所(2002))2 D.J.Eaglesham, M.Cerullo, Dislocation-free Stranski-Krastanow growth of Ge on Si(100), Physical Review Letters, 64(16), 1943(1990)3 S.Tong, J.L.Liu, J.Wan, K.L.Wang, Normal-incidence Ge quantum-dot photodetectors at 1.5μm based on Si substrate, Applied Physics Letters, 80(7), 1189(2002)4 J.L.Liu, W.G.Wu, A.Balandin, G.L.Jin, K.L.Wang, Intersubband absorption in boron-doped multiple Ge quantum dots, Applied Physics Letters, 74(2), 185(1999)5 A.I.Yakimov, A.V.Dvurechenskii, Y.Y.Proskuryakov, A.I.Nikiforov, O.P.Pchelyakov, S.A.Teys, A.K.Gutakovskii, Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Geself-assembled quantum dots, Applied Physics Letters, 75(10), 1413 (1999)6 C.Miesner, O.R¨othig, K.Brunner, G.Abstreiter, Intravalence band photocurrent spectroscopy of self-assembled Ge dots in Si, Applied Physics Letters, 76(8), 1027(2000)7 C.Li, Q.Q.Yang, Y.H.Cheng, H.J.Wang, J.Z.Wang, J.Z.Yu, Q.M.Wang, A study of Si1−xGex/Si quantum well intermixing by photocurrent spectroscopy, Thin Solid Films, 359(2), 236(2000)8 SHI Wenhua, The study of Ge/Si nano-islands and device, Ph.D. Dissertation, Institute of Semiconductors, Chinese Academy of Sciences(2007)(时文华, Ge/Si纳米岛材料与器件研究, 博士学位论文, 中国科学院半导体研究所(2007))9 X.Liu, D.Huang, Z.Jiang, X.Wang, Interface broadening and Raman scattering in Si1−xGex/Si superlattices, Physical Review B, 53(8), 4699(1996)10 P.Boucaud, L.Wu, C.Guedj, F.H.Julien, I.Sajnes, Y.Campidelli, L.Garchery, Photoluminescence and intersubband absorption spectroscopy of interdiffused Si/SiGe quantum wells, Journal of Applied Physics, 80(3), 1414(1996)11 J.Y.Yao, T.G..Anderson, G.L.Duniop, The interfacial morphology of strained epitaxial InxGa1−xAs/GaAs, Journal of Applied Physics, 69(4), 2224(1991)12 Z.Pan, Y.T.Wang, Y.Zhuang, Y.W.Lin, Z.Q.Zhou, L.H.Li, R.H.Wu, Q.M.Wang, Investigation of periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices by the kinematical simulation of x-ray diffraction, Applied Physics Letters, 75(2), 223(1999)13 J.Wan, Y.H.Luo, Z.M.Jiang, J.Wan, Y.H.Luo, Z.M.Jiang, G.Jin, J.L.Liu, K.L. Wang, X.Z.Liao, J.Zou, Ge/Si interdiffusion in the GeSi dots and wetting layers, Journal of Applied Physics, 90(8), 4290(2001)14 M.A.Renucci, J.B.Renucci, M.Cardona, in: Proceeding of the Second International Conference on Light Scattering in Solids, Raman Scattering in Ge–Si Alloys, edited by M.Balkanski (Paris, Flammarion, 1971) p.32615 J.C.Tsang, P.M.Mooney, F.Dacol, J.O.Chu, Measurements of alloy composition and strain in thin GexSi1−x layers, Journal of Applied Physics, 75(12), 8098(1994)16 P.H.Tan, K.Brunner, D.Bougeard, G.Abstreiter, Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots, Physical Review B, 68(12), 125302(2003)17 Q.J.Cai, H.Zhou, F.Lu, The effects of thermal annealing in self-assembled Ge/Si quantum dots, Applied Surface Science, 253(10), 4792(2007) |
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