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| Preparation and Property of Nanocrystalline Diamond Film oped with N |
| WANG Yanping，WANG Bing，XIONG Ying，HOU Liang |
| School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010 |
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Cite this article:
WANG Yanping WANG Bing XIONG Ying ZHOU Liang. Preparation and Property of Nanocrystalline Diamond Film oped with N. Chin J Mater Res, 2011, 25(2): 147-150.
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Abstract Nanocrystalline diamond film doped with N was prepared on Si substrate by microwave lasma chemical vapor deposition (MPCVD) technology using Ar, CH4, CO2 as actiong gas source and he methanol saturated solution of melamine as doping source. The as-grown film was characterized with FM microscopy and Raman spectrum, the phase composition of diamond film was characterized by its ypical Raman spectrum form. Hall effect measurement was used to reveal its conductive feature. The esults show that the thin film has average crytalline grains nearly 20nm and fine surface roughness about 935nm, the nitrogen doped nanocrystalline diamond film is highly conductive n-type semiconductor with letric conductivity to 0.76×102Ω−1cm−1 and carrier concentration to 2.18×1019/cm3.
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Received: 07 September 2010
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| Fund: Supported by the United Fund of National Natural Science Foundtion and China Academy of Engineering Physics No.10876032, the National Defense Basic Scientific Research No. B3120090020. |
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