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| Homoepitaxial Growth and Photoluminescence Properties of Hierarchical In2O3 Nanostuctures |
| GUO Taibo, CHEN Yiqing, ZHANG Xinhua, LIU Lizhu |
| School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 |
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Cite this article:
GUO Taibo CHEN Yiqing ZHANG Xinhua LIU Lizhu. Homoepitaxial Growth and Photoluminescence Properties of Hierarchical In2O3 Nanostuctures. Chin J Mater Res, 2011, 25(1): 7-12.
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Abstract Large-scale hierarchical In2O3 nanostructures have been synthesized using vapor transport and condensation method without any catalyst, taking advantage of the self-assembly property and epitaxial vapor-solid (VS) growth mechanism, and were characterized by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results show that the In2O3 nanorods are single crystals with body-centered cubic (bcc) structure, epitaxially growing along <100> and <111> directions. Homoepitaxial interconnections can be observed at the branched junctions, and the growth process of the nanorods arrayed on the microcrystals is a combination of “secondary nucleation” and VS process. The room-temperature photoluminescence spectrum of In2O3 nanostructures exhibited ultraviolet emission at 386 nm and blue emission at 435 nm, which can be ascribed to the near-band-edge (NBE) emission and the possible recombination of a photo-excited hole with an electron occupying the singly ionized oxygen vacancies, respectively.
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Received: 26 October 2010
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| Fund: Supported by National Natural Science Foundation of China No.20671027. |
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