Effect of Annealing Oxygen Partial Pressure on Transmittance and Conductivity of AZO Thin Films

doi:10.11901/1005.3093.2018.265

Chinese Journal of Materials Research

2018, Vol. 32

Issue (11): 861-866 DOI: 10.11901/1005.3093.2018.265

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Effect of Annealing Oxygen Partial Pressure on Transmittance and Conductivity of AZO Thin Films

Yanxue WANG¹, Ruiwu LI¹, Wei FAN², Yuanyuan GUO¹, Yanwen ZHOU¹, Fayu WU¹(

)

1 School of Surface Engineering Institute, University of Science and Technology Liaoning, Anshan 114051, China
2 Liaoning Rongxin Xingye Power Technology Co. Ltd., Anshan 114051, China

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Yanxue WANG, Ruiwu LI, Wei FAN, Yuanyuan GUO, Yanwen ZHOU, Fayu WU. Effect of Annealing Oxygen Partial Pressure on Transmittance and Conductivity of AZO Thin Films. Chinese Journal of Materials Research, 2018, 32(11): 861-866.

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Abstract

The transparent conductive films aluminum doped zinc oxide (AZO) was prepared on a glass substrate by RF magnetron sputtering from powder targets. AZO films were annealed by controlling the temperature and oxygen partial pressure. The morphology and microstructure,as well as the optical and electrical properties of the as-deposited and annealed films were characterized by Scanning electron microscope(SEM),X-ray diffraction (XRD),UV-visible Spectrophotometer and the Hall-effect measure-ment．The results show that annealed AZO film keep a (002) preferred orientation hexagonal wurtzite structure, and the smooth and compact surface. With the decrease of annealing oxygen partial pressure the optical band gap becomes narrow, and the transmittance of AZO films decreases slightly but still above 80%. As the annealing oxygen partial pressure decreases, the electrical conductivity of AZO films is significantly improved with evident increase of charge carrier concentration. The resistivity is reduced to 2.1×10^-3 Ω·cm.

Key words: Inorganic non-metallic materials AZO film RF magnetron sputtering oxygen partial pressure electrical property optical property

Received: 10 April 2018

ZTFLH:

TB34

Fund: Supported by National Natural Science Foundation of China (Nos. 51502126 & 51672119) and the Open Subject of Key Laboratory Liaoning Province (No. USTLKFSY201705)

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	Yanxue WANG
	Ruiwu LI
	Wei FAN
	Yuanyuan GUO
	Yanwen ZHOU
	Fayu WU

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https://www.cjmr.org/EN/10.11901/1005.3093.2018.265 OR https://www.cjmr.org/EN/Y2018/V32/I11/861

Fig.1 SEM of AZO films annealed at different oxygen partial pressure (a) unannealed; (b) 4.2×10^-2 Pa; (c) 3.2×10^-3 Pa; (d) 2.5×10^-4 Pa; (e)3.2×10^-5 Pa

Fig.2 XRD patterns of AZO films annealed at different oxygen partial pressure (a) in a wide range of angles ;(b) (002) peaks in detail

Fig.3 Transmittance of AZO films annealed at different oxygen partial pressure

Table 1 Transmittance and conductivity of AZO films annealed at different oxygen partial pressure

Fig.4 SEM of AZO films annealed at different temperatures (a) unannealed; (b) 350℃; (c) 400℃; (d) 450℃; (e) 470℃

Fig.5 XRD patterns of AZO films annealed at different temperatures (a) in a wide range of angles; (b) (002) peaks in detail

Fig.6 Transmittance of AZO films annealed at different temperatures

Table 2 Transmittance and conductivity of AZO films annealed at different temperatures

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