The Influence of Selenization Temperature on the Properties of CuInGaSe2 Thin Film

Chin J Mater Res

2010, Vol. 24

Issue (4): 358-362 DOI:

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The Influence of Selenization Temperature on the Properties of CuInGaSe2 Thin Film

LI Chunei, ZHUANG, Daming, ZHANG Gong, LUAN Hexin, LIU Jiang, SONG Jun

Department of Mechanical Engineering, Tsinghua University, Beijing 100084

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LI Chunei ZHUANG Daming ZHANG Gong LUAN Hexin LIU Jiang SONG Jun. The Influence of Selenization Temperature on the Properties of CuInGaSe2 Thin Film. Chin J Mater Res, 2010, 24(4): 358-362.

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Abstract

As the absorber layer in CISe-based solar cell CIGSe thin film was prepared by precursorselenization method. The influences of selenization temperature on compositions, morphologies, phase structures and electronic properties of CIGSe thin films were investigated. The compositions, morphologies and phase structures of CIGSe by means of XRF, SEM, XRD and Raman, respectively were analyzed. Based on Hall Effect the resistivities and minority carrier mobilities of CIGSe were tested. The results show that there are no differences in morphologies and compositions of CIGSe films prepared at 520–560^oC. Ordered defect compound (ODC) phase and Cu–Se phase increase with the increasing of selenization temperatures, which increases the concentrations of defect in CIGSes and causes the deterioration of electronic properties of thin film.

Key words: inorganic non-metallic materials solar cell CuInGaSe2 precursor-selenization selenization temperature ODC phase Cu-Se phase

Received: 07 April 2010

ZTFLH:

TM615

Fund:

Supported by National High Technology Research and Development Program of China No.2007AA05Z461.

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https://www.cjmr.org/EN/ OR https://www.cjmr.org/EN/Y2010/V24/I4/358

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