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| Comparison of indentation-induced deformation and fracture of several kinds of semiconductor single crystals |
| YAO Zhigang ; ZHU Xiaofei; ZHANG Guangping |
| Shenyang National Laboratory for Materials Science; Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110016 |
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Cite this article:
YAO Zhigang ZHU Xiaofei ZHANG Guangping. Comparison of indentation-induced deformation and fracture of several kinds of semiconductor single crystals. Chin J Mater Res, 2009, 23(2): 180-186.
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Abstract Micro-indentation method was used to study deformation and fracture behavior of Si, Ge, GaAs, InP single crystals. In-plane microhardness, critical indentation size and fracture toughness of the [100] oriented crystals were measured to analyze anisotropic mechanical properties of these materials. The results show that under the indentation load, Si and Ge deformed through the formation of shear faults, while the activation of slip systems accommodated the deformation of GaAs and InP. The microhardness, elastic modulus and fracture toughness exhibit anisotropic at different extent. The relationship between crack length and indent size shows that the critical indent size and the linearly-fitted slope of the crack length vs. indent size of Si and Ge single crystals are smaller than that of GaAs and InP. The variations of the critical indent size and the linear slope are consistent with that of the hardness and fracture toughness.
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Received: 24 April 2008
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| Fund: Supported by 2007 China-Australia Special Fund for Science and Technology Cooperation and the National Basic Research Program of China No.2004CB619303. |
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