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| Framework and photoluminescence property of porous silicon after dipped in solution |
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| 苏州大学 |
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Cite this article:
. Framework and photoluminescence property of porous silicon after dipped in solution. Chin J Mater Res, 2004, 18(5): 537-541.
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Abstract The rich oxided Si nanocrystallites were formed on the surface of the traditional
electrochemically--produced samples after being peeled off the surface porous
film in the marinade. Photoluminescence (PL) was used to characterize the samples.
Ultraviolet--blue PL intensity is about 10 times as much as that of the samples before
being peeled off the porous film. The PL intensity is one third of the original
intensity after annealed in O$_{2}$ at 300℃, and then becomes stronger along with
the increase of the annealing temperature.
There are different luminescence mechanisms of the samples
before and after annealing, carriers are excited mostly in the Si nanocrystallites and
radiative recombined in the SiO$_{2}$ layers before annealing; and carries are
excited and radiative recombined both in the SiO$_{2}$ layers after annealing.
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Received: 05 November 2004
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