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| Effect of substrate structures on crystal orientation of the FeS$_{2}$ thin films |
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| 浙江大学金属材料研究所 |
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Cite this article:
. Effect of substrate structures on crystal orientation of the FeS$_{2}$ thin films. Chin J Mater Res, 2004, 18(4): 373-379.
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Abstract Polycrystalline FeS$_{2}$ thin films were prepared by annealing the iron films
in sulfur atmosphere. The crystal structure was determined and the orientation
texture was discussed for the FeS$_{2}$ films prepared on the substrates with different
structures. The results show that the texture distribution of the film can be
controlled in a certain extent using the substrate with different crystalline
types. The FeS$_{2}$ films prepared on the substrates Si(100), Si(111) and Al
have only one preferred orientation (200), while those on the microcrystalline
TiO$_{2}$ substrates share two preferred orientations (200) and (220). There is
an insignificant effect of amorphous glass substrates on orientation distribution
in the film growth. Various substrates induce different interfacial mismatch
between the film and substrate, and result in the changes of lattice distortion
degree, grain size and texture distribution. The film surface energy and natural
orientation of grain growth mainly dominate the resultant distribution of crystal
orientation and induce small lattice distortion and fine grains in the film if the
substrate is amorphous or has high interfacial mismatch. Besides the film surface
energy and natural orientation of grain growth, the interface strain energy
participates in the domination to the resultant distribution of crystal
orientation and tends to induce strong lattice distortion and coarse grains if
the substrate is crystalline and has low interfacial mismatch.
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Received: 31 August 2004
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