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Chin J Mater Res  2004, Vol. 18 Issue (4): 365-372    DOI:
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Electrical properties of SiC 3--dimensional network
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中国科学院金属研究所
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;. Electrical properties of SiC 3--dimensional network. Chin J Mater Res, 2004, 18(4): 365-372.

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Abstract  A finite element analysis of a unit cell modeling of electrical characteristics of SiC three dimensional networks is presented. A reasonable theoretical formula describing the resistivity of SiC 3--D networks was established. Calculated results showed that a uniform electrical current distribution of SiC 3--D networks can be obtained when uniform voltages are applied. The networks with a diamond unit cell have 3--D connectivity characteristics, while the networks with a rectangular unit cell have one--dimension characteristics. Ceramic networks with a diamond unit cell still keep the 3--D connectivity characteristics when its $L/S\gg$1 cm$^{-1}$.
Key words:  inorganic non-metallic materials      three-dimensional networks      finite element analysis      electrical chara     
Received:  31 August 2004     
ZTFLH:  TG321  
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