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| Optical and Electronic Properties of Nb Doped Indium-zinc Oxide Films Grown by Magnetron Sputtering |
| Mingjie CAO,Ming ZHAO,Daming ZHUANG,Li GUO,Liangqi SUN Rujun OUYANG,Shilu ZHAN |
| Key Lab for Advanced Materials Processing Technologies, Ministry of Education, China, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China |
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Cite this article:
Mingjie CAO,Ming ZHAO,Daming ZHUANG,Li GUO,Liangqi SUN Rujun OUYANG,Shilu ZHAN. Optical and Electronic Properties of Nb Doped Indium-zinc Oxide Films Grown by Magnetron Sputtering. Chinese Journal of Materials Research, 2016, 30(9): 649-654.
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Abstract Niobium doped indium-zinc oxide (INZO) film, as a new channel layer material for thin film transistors (TFTs), was deposited on glass by co-sputtering targets of IZO and Nb2O5. The optical and electronic properties of the films were investigated by means of XRD, photo luminescence (PL) and Hall effect measurements. The PL results indicate that the density of deep sub-gap states in INZO films is lower than that of Ga doped IZO (IGZO). The Hall measurement results show that the carrier concentration of INZO can be effectively controlled by the O2 flow rates and thereby the carrier concentration of INZO can meet the requirement for TFT application as a channel layer. The Hall mobility increases with the increasing carrier concentration, which can be well explained by the percolation model. Optical analysis of Urbach energy demonstrates that the poor mobility with high carrier concentration originates from the structural disorder due to overabundant oxygen vacancies. The films deposited on the substrate at 250oC exhibit higher mobility but more or less the same degree of structural disorder in comparision with that at 30oC.
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Received: 12 December 2015
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