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| Al2O3/NiO包裹Ni纳米颗粒的结构和磁性 |
| 史桂梅12;张志东2;李志杰1;杨洪才3 |
| 1.沈阳工业大学 2.中国科学院金属研究所 3.东北大学 |
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引用本文:
史桂梅; 张志东; 李志杰; 杨洪才 . Al2O3/NiO包裹Ni纳米颗粒的结构和磁性[J]. 材料研究学报, 2005, 19(3): 297-302.
1 D.Leong,M.Harry,K.J.Reeson,K.P.Homewood,A silicon/iron-disilicide lightemitting diode operating at a wavelength of 1.5 mm,Nature,387,686(1997)
2 C.A.Dimitriadis,J.H.Werner,Growth mechanism and morphology of semiconducting FeSi_2 films,Appl.Phys., 68,94(1990)
3 V.E.Borisenko,Semi-Conducting Silicides,(Springer Se- ries in Materials Science,Springer-Verlag,New York, 2000)
4 K.Yamaguchi,K.Shimura,H.Udono,M.Sasase, H.Yamamoto,S.Shamoto,K.Hojou,Effect of ther- mal annealing on the photoluminescence ofβ-FeSi_2 films on Si substrate,Thin Solid Films,508,367(2006)
5 N.E.Christensen,Electronic structure ofβ-FeSi_2,Phys. Rev.B,42,7148(1990)
6 C.N.McKinty,A.K.Kewell,J.S.Sharpe,M.A.Lourenco, T.M.Butler,R.Valizadeh,J.S.Colligon,K.J.Reeson, K.P.Homewood,The optical properties ofβ-FeSi_2 fabri- cated by ion beam assisted sputtering,Nucl.Instr.and Meth.in Phys.Res.B,161-163,922(2000)
7 S.Y.Ji,J.F.Wang,J.W.Lim,M.Isshiki,Growth process ofβ-FeSi_2 epitaxial film on Si(111)by molecular beam epi- taxy,Applied Surface Science,253,444(2006)
8 K.M.Geib,J.E.Mahan,R.G.Long,M.Nathan,G.Bai,Epi- taxial orientation and morpology ofβ-FeSi_2 on(001)sil- icon,J.Appl.Phys.,70(3),1730(1991)
9 D.R.Miquita,R.Paniago,W.N.Rodrigues, M.V.B.Moreira,H.D.Pfannes,A.G.de Oliveira,Growth ofβ-FeSi_2 layers on Si(111)by solid phase and reactive deposition epitaxies,Thin Solid Films,493,30(2005)
10 A.Yamamoto,S.Tanaka,D.Matsubayashi,S.Makiuchi, H.Tatsuoka,T.Matsuyama,M.Tanaka,Z.Q.Liu, H.Kuwabara,Morphological modification ofβ-FeSi_2 on Si(111)by high temperature growth and post-thermal annealing,Thin Solid Films,461,28(2004)
11 Y.T.Chong,Q.Li,C.F.Chow,N.Ke,W.Y.Cheung, S.P.Wong,K.P.Homewood,The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi_2 in Si,Materials Science and Engineering B,124-125,444(2005)
12 M.A.Lourenco,T.M.Butler,A.K.Kewell,R.M.Gwilliam, K.J.Kirkby,K.P.Homewood,Electrical,Electronic and op- tical characterisation of ion Beam synthesisedβ-FeSi_2 light emitting devices,Nucl.Instr.and Meth.In Phys. Res.B,175-177,159(2001)
13 K.Kyllesbech Larsen,J.Tavares,H.Bender,R.A.Donaton, A.Lanwers,K.Maex,Growth of epitaxialβ-FeSi_2 on(100) silicon using Fe-Ti-Si diffusion couples,J.Appl.Phys., 78(1),599(1995)
14 K.Okajima,Ch.Wen,M.Ihara,I.Sakata,K.Yamada,Op- tical and electrical properties ofβ-FeSi_2/Si,β-FeSi_2/InP heterojunction prepared by RF-sputtering deposition, Jpn.J.Appl.Phys.,38,781(1999)
15 S.Chu,T.Hirohada,H.Kan,Room temperature 1.58μm photoluminescence and electric properties of highly ori- entedβ-FeSi_2 films prepared by magnetron-sputtering de- position,Jpn.J.Appl.Phys.,41,L299(2002)
16 S.Chu,T.Hirohada,K.Nakajima,H.Kan,T.Hiruma, Room-temperature 1.56μm electroluminescence of highly orientedβ-FeSi_2/Si single heterojunction prepared by magnetron-sputtering deposition,Jpn.J.Appl.Phys., 41,L1200(2002)
17 S Chu.,T.Hirohada,M.Kuwabara,H.Kan,T.Hiruma, Time-resolved 1.5μm-band photoluminescence of highly orientedβ-FeSi_2 films prepared by magnetron-sputtering deposition,Jpn.J.Appl.Phys.,43,L127(2004)
18 Y.Gao,Y.T.Chong,C.F.Chow,S.P.Wong, K.P.Homewood,Q.Li,Post-annealing effect on the microstructure and photoluminescence properties of the ion beam synthesized FeSi_2 precipitates in Si,Nucl.Instr. and Meth.in Phys.Res.B,259(2),871(2007)
19 M.Muroga,H.Suzuki,H.Udono,I.Kikuma,A.Zhuravlev, K.Yamaguchi,H.Yamamoto,T.Terai,Growth ofβ-FeSi_2 thin films onβ-FeSi_2(110)substrates by molecular beam epitaxy,Thin Solid Films,2007,515(22),8197(2007)
20 K.Omae,I.T.Bae,M.Naito,M.Ishimaru,Y.Hirotsu, J.A.Valdez,K.E.Sickafus,Structural evolution in Fe ion implanted Si upon thermal annealing,Nucl.Instr.and Meth.in Phys.Res.B,250,300(2006)
21 ZHANG Jinmin,XIE Quan,ZENG Wuxian,LIANG Yan, ZHANG Yong,YU Ping,TIAN Hua,The effects of an- nealing on atomic interdiffusion and microstructures in Fe/Si system,Chinese Journal of Semiconductors,28(12), 40(2007) (张晋敏，谢泉，曾武贤，梁艳，张勇，余平，田华，退火对Fe/Si结构原子间互扩散及显微结构的影响，28(12)，40(2007))
22 C.H.Yu,Y.L.Chueh,S.W.Lee,S.L.Chenga,L.J.Chen, L.J.Chou,L.W.Cheng,Solid phase reactions between Fe thin films and Si-Ge layers on Si,Thin Solid Films,461, 81(2004)
23 N.P.Barradas,C.Jeynes,K.P.Homewood,B.J.Sealy, M.Milosavljevic,RBS/simulated annealing analysis of sili- cide formation in Fe/Si systems,Nucl.Instr.and Meth. in Phys.Res.B,139,235(1998)
24 H.C.Cheng,T.R.Yew,L.J.Chen,Epltaxial growth of FeSi_2 in Fe thin films on Si with a thin interposing Ni layer, Appl.Phys.Lett.,47(2),128(1985)
25 K.Yamaguchi,A.Heya,K.Shimura,T.Katsumata, H.Yamamoto,K.Hojou,Effect of target compositions on the crystallinity ofβ-FeSi_2 prepared by,ion beam sputter deposition method,Thin Solid Films,461,17(2004)
26 N.P.Barradas,C.Jeynes,K.P.Homewood,B.J.Sealy, M.Milosavljevic,RBS/simulated annealing analysis of sili- cide formation in Fe/Si systems,Nucl.Instr.and Meth. in Phys.Res.B,139,235(1998)
27 K.P.Lieb,K.Zhang,V.Milinovic,P.K.Sahoo, S.Klaumunzer,On the structure and magnetism of Ni/Si and Fe/Si bilayers irradiated with 350-MeV Au ions,Nucl.Instr.and Meth.in Phys.Res.B,245, 121(2006)
28 T.Saito,H.Yamamoto,M.Sasase,T.Nakanoya, K.Yamagnchi,M.Haraguchi,K.Hojou,Surface chem- ical states and oxidation resistivity of'ecologically friendly'semiconductor(β-FeSi_2)thin films,Thin Solid Films,415,138(2002)
29 E.Rauhala,N.P.Barradas,M.Fazinic,S.Mayer,E.Szilágyi, M.Thompson,Status of ion beam data analysis and sim- ulation software,Nucl.Instr.and Meth.in Phys.Res. B,244,436(2006)
30 S.Senthilarasu,R.Sathyamoorthy,S.Lalitha,D.K.Avasthi, Structural properties of swift heavy ion beam irradiated Fe/Si bilayers,Thin Solid Films,490,177(2005)
31 M.Itakura,N.Kishikawa,R.Kawashita,N.Kuwano,Epi- taxial orientation and morphology ofβ-FeSi_2 produced on a flat,and a patterned Si(001)substrates,Thin Solid Films,515(22),8169(2007)
32 K.Radermacher,S.Mantl,Ch.Dieker,H.Lüth, C.Freiburg,Growth kinetics of iron silicides fabriated by solid phase epitaxy or ion beam synthesis,Thin Solid Films,215,76(1992)
33 Ch.Kloc,E.Arushanow,M.Wendl,H.Hohl,U.Malang, E.Bucher,Growth mechanism and morphology of semi- conducting FeSi2 films,Journal of Alloys and Compounds, 219,93(1995) |
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