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材料研究学报  2011, Vol. 25 Issue (6): 630-636    
  研究论文 本期目录 | 过刊浏览 |
脉冲偏压幅值对TiN/TiAlN多层薄膜微观结构和性能的影响
魏永强1,2, 田修波1, 巩春志1, 杨士勤1
1.哈尔滨工业大学现代焊接生产技术国家重点实验室 哈尔滨 150001
2.郑州航空工业管理学院机电工程学院 郑州 450015
Effect of Pulsed Bias Voltage on the Microstructures and properties of TiN/TiAlN Multilayer Coatings
WEI Yongqiang1,2, TIAN Xiubo1,  GONG Chunzhi1, YANG Shiqin1
1.State Key Lab of Advanced Welding Production Technology, Harbin Institute of Technology, Harbin 150001
2.School of Mechanical Engineering, Zhengzhou Institute of Aeronautics Industry Management, Zhengzhou 450015
引用本文:

魏永强 田修波 巩春志 杨士勤. 脉冲偏压幅值对TiN/TiAlN多层薄膜微观结构和性能的影响[J]. 材料研究学报, 2011, 25(6): 630-636.
, , , . Effect of Pulsed Bias Voltage on the Microstructures and properties of TiN/TiAlN Multilayer Coatings[J]. Chin J Mater Res, 2011, 25(6): 630-636.

全文: PDF(1136 KB)  
摘要: 采用电弧离子镀的方法, 通过改变脉冲偏压幅值在M2高速钢表面制备了TiN/TiAlN多层薄膜, 研究了脉冲电压幅值TiN/TiAlN多层薄膜微观结构和性能的变化。随着脉冲偏压幅值的增加, 薄膜表面的大颗粒数目明显减少。EDX结果表明, 脉冲偏压幅值的增加还引起Al/Ti原子比的降低。TiN/TiAlN多层薄膜主要以(111)晶面为择优取向生长, 随着脉冲偏压幅值的增加, 峰值强度逐渐增强, 晶粒尺寸在8 nm~14 nm。制备的TiN/TiAlN多层薄膜的硬度都超过36 GPa, 是M2高速钢基体硬度的3.9倍以上, 膜基结合力均达到60 N以上。摩擦磨损测试结果表明, TiN/TiAlN多层薄膜具有良好的抗磨损性能。
关键词 材料表面与界面TiN/TiAlN多层薄膜电弧离子镀硬度微观结构摩擦性能    
Abstract:TiN/TiAlN multilayer coatings were prepared by arc ion plating with different pulsed bias voltages. With the increase of pulsed bias voltage, the amounts of the macroparticles were largely reduced. The increase of the pulsed bias voltage caused the decrease of Al/Ti atom ratio. The multilayer coatings exhibited growth in preferred orientation of (111) plane with the grain size ranging from 8nm to 14nm. The hardness of TiN/TiAlN multilayer coatings was over 36GPa, which was 3.9 times that of M2 high speed substrate. All the adhesion strength of TiN/TiAlN multilayer coatings was more than 60 N. All the TiN/TiAlN multilayer coatings showed better wear resistance.
Key wordssurface and interface in the materials    TiN/TiAlN multilayer coatings    arc ion plating    hardness    microstructure    tribological properties
收稿日期: 2011-04-19     
ZTFLH: 

O484

 
基金资助:

国家自然科学基金10905013和10975041资助项目。

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